Tapas Pal

Bio: Tapas Pal is an academic researcher from Central Electronics Engineering Research Institute. The author has contributed to research in topics: ISFET. The author has an hindex of 2, co-authored 2 publications receiving 5 citations.

Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results

Abstract: This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

Numerical Simulation of ISFET Structures for BioSensing Devices with TCAD Tools.

Abstract: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level simulation. In this work we present a numerical simulation approach to the study of ISFET structures for bio-sensing devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. The properties of a custom-defined material were modified in order to reproduce the electrolyte behavior. In particular, the parameters of an intrinsic semiconductor material have been set in order to reproduce an electrolyte solution. By replacing the electrolyte solution with an intrinsic semiconductor, the electrostatic solution of the electrolyte region can therefore be calculated by solving the semiconductor equation within this region. The electrostatic behaviour (transfer characteristics) of a general BioFET structure has been simulated when the captured target number increases from 1 to 10. The I D current as a function of the V DS voltage for different positions of a single charged block and for different values of the reference electrode have been calculated. The electrical potential distribution along the electrolyte-insulator-semiconductor structure has been evaluated for different molar concentrations of the electrolyte solution. We presented a numerical simulation approach to the study of Ion-Sensitive Field Effect Transistor (ISFET) structures for biosensing devices (BioFETs) using the Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. A powerful framework for the design and optimization of biosensor has been devised, thus helping in reducing technology development time and cost. The main finding of the analysis of a general reference BioFET shows that there is no linear relationship between the number of charges and the current modulation. Actually, there is a strong position dependent effect: targets localized near the source region are most effective with respect to targets localized near the drain region. In general, even randomly distributed targets are more efficient with respect to locally grouped targets on the current modulation. Moreover, for the device at hand, a small positive biasing of the electrolyte solution, providing that the transistor goes on, will result in a greater enhancement of the current levels, still retaining a good sensitivity but greatly simplifying the operations of a real device.

Fabrication, Characterization, and Modeling of an Aluminum Oxide-Gate Ion-Sensitive Field-Effect Transistor-Based pH Sensor.

Abstract: The ion-sensitive field-effect transistor (ISFET) is a popular technology utilized for pH sensing applications. In this work, we have presented the fabrication, characterization, and electrochemical modeling of an aluminum oxide (Al2O3)-gate ISFET-based pH sensor. The sensor is fabricated using well-established metal-oxide-semiconductor (MOS) unit processes with five steps of photolithography, and the sensing film is patterned using the lift-off process. The Al2O3 sensing film is deposited over the gate area using pulsed-DC magnetron-assisted reactive sputtering technique in order to improve the sensor performance. The material characterization of sensing film has been done using x-ray diffraction, field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray photoelectron spectroscopy techniques. The sensor has been packaged using thick-film technology and encapsulated by a dam-and-fill approach. The packaged device has been tested in various pH buffer solutions, and a sensitivity of nearly 42.1 mV/pH has been achieved. A simulation program with integrated circuit emphasis (SPICE) macromodel of the Al2O3-gate ISFET is empirically derived from the experimental results, and the extracted electrochemical parameters have been reported. The drift and hysteresis characteristics of the Al2O3-gate ISFET were also studied, and the obtained drift rates for different pH buffer solutions of 4, 7, and 10 are 0.136 μA/min, 0.124 μA/min, and 0.108 μA/min, respectively. A hysteresis of nearly 5.806 μA has been obtained. The developed sensor has high sensitivity along with low drift and hysteresis.