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Author

Tarun Kanti Bhattacharyya

Other affiliations: Indian Institutes of Technology
Bio: Tarun Kanti Bhattacharyya is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: CMOS & Phase-locked loop. The author has an hindex of 19, co-authored 216 publications receiving 1521 citations. Previous affiliations of Tarun Kanti Bhattacharyya include Indian Institutes of Technology.


Papers
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Journal ArticleDOI
TL;DR: A family of position mutated hierarchical particle swarm optimization algorithms with time varying acceleration coefficients with a distinct advantage of the proposed algorithms over the existing mutated PSO algorithms is that PM_nHPSO-TVAC do not involve any controlling parameter.
Abstract: A family of position mutated hierarchical particle swarm optimization algorithms with time varying acceleration coefficients (viz. PM_nHPSO-TVAC, n = 1, 2, 3, 4) is introduced in this paper. The proposed position mutation schemes help the swarm to get out of local optima traps and the hierarchical nature of the swarm prevents premature convergence. One distinct advantage of the proposed algorithms over the existing mutated PSO algorithms is that PM_nHPSO-TVAC do not involve any controlling parameter. Performance of the proposed algorithms is evaluated on standard benchmark functions. Comparative study shows that PM_4HPSO-TVAC performs better than the other PM_n HPSO-TVAC, HPSO-TVAC, comprehensive learning PSO (CLPSO), adaptive-CLPSO (A-CLSPO), PSO with time-varying inertia weight (PSO-TVIW), and constriction factor PSO (CFPSO) for the benchmark functions considered. We apply the proposed algorithm to the synthesis of uniformly excited, unequally dpaced linear array to minimize sidelobe level (SLL) and to control first-null-beamwidth (FNBW) and null locations. Further, we apply the proposed algorithm to the synthesis of unequally spaced sparse planar array to minimize SLL.

69 citations

Journal ArticleDOI
TL;DR: A survey of the developments in this field of resonant MEMS structures with detailed enumeration on the various micromechanical resonator types, modes of vibration, equivalent mechanical and electrical models, materials and technologies used for fabrication, and the application of the resonators for implementing oscillators and filters.
Abstract: Over the past few years, microelectromechanical system (MEMS) based on-chip resonators have shown significant potential for sensing and high frequency signal processing applications This is due to their excellent features like small size, large frequency-quality factor product, low power consumption, low cost batch fabrication, and integrability with CMOS IC technology Radio frequency communication circuits like reference oscillators, filters, and mixers based on such MEMS resonators can be utilized for meeting the increasing count of RF components likely to be demanded by the next generation multi-band/multi-mode wireless devices MEMS resonators can provide a feasible alternative to the present-day well-established quartz crystal technology that is riddled with major drawbacks like relatively large size, high cost, and low compatibility with IC chips This article presents a survey of the developments in this field of resonant MEMS structures with detailed enumeration on the various micromechanical resonator types, modes of vibration, equivalent mechanical and electrical models, materials and technologies used for fabrication, and the application of the resonators for implementing oscillators and filters These are followed by a discussion on the challenges for RF MEMS technology in comparison to quartz crystal technology; like high precision, stability, reliability, need for hermetic packaging etc, which remain to be addressed for enabling the inclusion of micromechanical resonators into tomorrow’s highly integrated communication systems

57 citations

Journal ArticleDOI
TL;DR: In this article, a-C:H and a-Si:O networks of diamond-like nanocomposite (DLN) thin films were analyzed by atomic force microscopy.
Abstract: Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

50 citations

Journal ArticleDOI
TL;DR: In this paper, the performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped FETs were studied targeting the 3-nm node (N3) and beyond CMOS dimensions.
Abstract: The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To accommodate a contacted gate pitch (CGP) of 32 nm and below, the gate length is scaled down to 14 nm and beyond. While going from 5-nm node (N5) to 3-nm node (N3) dimensions, the GAA-lateral nanosheet (LNS) shows 8% reduction in the effective drain current ( ${I}_{eff}$ ) due to an enormous rise in short channel effects, such as subthreshold slope (SS) and drain-induced barrier lowering (DIBL). On the other hand, 5-nm diameter-based lateral nanowire shows an 80% rise in total current driving capability ( ${I}_{eff}$ ). Therefore, to enable future devices, we explored electrostatics and effective drive current ( ${I}_{eff}$ ) in FinFET, GAA-FET, and UFET architectures at a scaled dimension. The performances of both Si- and SiGe-based transistors are compared using an advanced device simulator, TCAD Sentaurus.

49 citations

Journal ArticleDOI
TL;DR: In this article, the performance of graphene oxide (GO) as humidity sensor was explored using modified Hummers and Offeman method, and the sensing layer was characterized using optical microscope, scanning electron microscopy and X-ray photoelectron spectroscopy.
Abstract: This paper explores the performance of graphene oxide (GO) as humidity sensor. GO was synthesized using modified Hummers and Offeman method, and the sensing layer was characterized using optical microscope, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. The sensor devices were fabricated by drop-casting of GO on patterned gold electrodes on Si/SiO2 substrate. GO-based sensor was exposed to six different relative humidity (RH%), and the response of our sensor was found to be excellent due to large proton conduction. The sensor response varied from ∼180 times (40% RH) to ∼1200 times (88% RH). Our GO-based humidity sensor also showed ultrafast response and recovery times with extremely good repeatability. Also, the role of functional groups in humidity sensing was explored by fabricating the sensor devices by thermally reducing GO for different time durations. We believe GO could potentially be used to develop new-generation ultrasensitive humidity sensor.

46 citations


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Book ChapterDOI
01 Jan 1976
TL;DR: A positive temperature coefficient is the term which has been used to indicate that an increase in solubility occurs as the temperature is raised, whereas a negative coefficient indicates a decrease in Solubility with rise in temperature.
Abstract: A positive temperature coefficient is the term which has been used to indicate that an increase in solubility occurs as the temperature is raised, whereas a negative coefficient indicates a decrease in solubility with rise in temperature.

1,573 citations

01 Jan 2016
TL;DR: The electronic transport in mesoscopic systems is universally compatible with any devices to read, and is available in the book collection an online access to it is set as public so you can get it instantly.
Abstract: Thank you very much for reading electronic transport in mesoscopic systems. Maybe you have knowledge that, people have look numerous times for their favorite readings like this electronic transport in mesoscopic systems, but end up in harmful downloads. Rather than reading a good book with a cup of tea in the afternoon, instead they juggled with some harmful bugs inside their computer. electronic transport in mesoscopic systems is available in our book collection an online access to it is set as public so you can get it instantly. Our book servers spans in multiple locations, allowing you to get the most less latency time to download any of our books like this one. Merely said, the electronic transport in mesoscopic systems is universally compatible with any devices to read.

1,220 citations

01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

912 citations

Journal ArticleDOI
TL;DR: A new form of delivery system called the microneedles helps to enhance the delivery of the drug through this route and overcoming the various problems associated with the conventional formulations.

548 citations

Journal ArticleDOI
TL;DR: A transparent and stretchable all-graphene multifunctional electronic-skin sensor matrix is developed that combines humidity, thermal, and pressure sensors into a layer-by-layer geometry through a simple lamination process.
Abstract: A transparent and stretchable all-graphene multifunctional electronic-skin sensor matrix is developed. Three different functional sensors are included in this matrix: humidity, thermal, and pressure sensors. These are judiciously integrated into a layer-by-layer geometry through a simple lamination process.

466 citations