Showing papers by "Tetsu Tanaka published in 1991"
01 Jan 1991
TL;DR: In this article, a planar p/sup +/ poly Si double-gate thin-film SOI nMOSFET was fabricated using wafer bonding and the fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFL.
Abstract: The authors have fabricated planar p/sup +/ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices. >
67 citations
18 citations
08 Dec 1991
TL;DR: In this paper, it was demonstrated that chlorine does not enhance B diffusion when fabricating p/sup +/ polysilicon gates, which is necessary to give reliable P/sup+/polysilicon gate P-MOSFETs which are expected to ease the short channel effect.
Abstract: Suppressing boron penetration through the gate oxide is necessary to give reliable p/sup +/ polysilicon gate P-MOSFETs which are expected to ease the short channel effect Fluorine was automatically introduced in the gate oxide by BF/sub 2/ implantation and enhanced B diffusion It is clearly demonstrated that chlorine does not enhance B diffusion BCl implantation when fabricating p/sup +/ polysilicon gates makes it possible to fabricate quarter-micron gate length P-MOSFETs with pure oxide 45 nm thick >
3 citations