Showing papers by "Tetsu Tanaka published in 1993"
TL;DR: In this paper, a scaling theory for double-gate SOI MOSFETs is presented, which gives guidance for device design that maintains a sub-threshold factor for a given gate length.
Abstract: A scaling theory for double-gate SOI MOSFETs, which gives guidance for device design (silicon thickness t/sub si/; gate oxide thickness t/sub ox/) that maintains a subthreshold factor for a given gate length is discussed. According to the theory, a device can be designed with a gate length of less than 0.1 mu m while maintaining the ideal subthreshold factor. This is verified numerically with a two-dimensional device simulator. >
550 citations
TL;DR: In this article, the authors derived analytical models for the currentvoltage characteristics of double-gate silicon-on-insulator metal-oxide-semiconductor-field effect transistors.
Abstract: We derived analytical models for the current-voltage characteristics of double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors. In the subthreshold region, we derived an analytical subthreshold slope model considering both depleted and induced charges. We proposed a unique definition of threshold voltage of the device, and showed that the threshold voltage is close to the experimentally defined threshold voltage at which the drain current has a specific value. The variation in the surface potential after the threshold voltage was modeled, and hence the models are valid in the moderate-inversion region as well as in the strong-inversion region. The models agree well with experimental data.
21 citations
14 May 1993
TL;DR: Using a perturbation theory, Wang et al. as discussed by the authors solved the Poisson equation considering both depleted and induced charges, and derived an analytical expressions for surface potential, I$s, for the entire subthreshold, moderate and strong-inversion regions.
Abstract: Double-Gate SO1 MOSFETs have been invoked to alleviate scaling limits of bulk MOSFETs. Since the potential distribution in these devices is quite unlike that in bulk MQSFETs. due to the symmetrical structure (Fig.' 1) and extremely low doping concentration NA [l]. the models developed for bulk MOSFETs are not applicable. Using a perturbation theory, we solved the Poisson equation considering both depleted and induced charges, and derived an analytical expressions for surface potential, I$s, for the entire subthreshold, moderateand strong-inversion regions. We then derived analytical models for the threshold voltage. V&. conducting charge concentration. 81, and subthreshold swing, S-factor pable 1) which agree well with numerical and experimental data.
5 citations
TL;DR: The magnetic properties of Fe-Tb-B alloys with fine TbFe2 grains crystallized from an amorphous state were investigated in this paper, where boron contents in excess of 5 mol%, situated on the line connecting Fe2Tb and FeB in a composition diagram, were prepared by rapid quenching.
Abstract: The magnetic properties of Fe-Tb-B alloys with fine TbFe2 grains crystallized from an amorphous state were investigated. Amorphous samples with boron contents in excess of 5 mol%, situated on the line connecting Fe2Tb and FeB in a composition diagram, were prepared by rapid quenching. An amorphous Fe65Tb30B5 alloy began to crystallize into a single TbFe2 phase at 803K, and a microstructure with a grain size of about 10 nm was obtained by heating at this crystallization temperature for one hour. The fine TbFe2 phase acted to lower the coercive force. Substitution of 5 mol% Mo in Fe65Tb30B5 led to the smaller grain size and also to a lower coercive force. On the other hand, the magnetostriction of Fe-Tb-B alloys under an applied field of 1.28 MA/m was increased by replacing Fe with 5 mol% Ti or 5mol% Cr.
3 citations