Showing papers by "Tetsu Tanaka published in 1996"
TL;DR: In this article, experimental data, device simulation, and analytical modeling for device comparison are employed. But the comparison is limited to the case of MOSFETs with channel length of 0.1 /spl mu/m and below reported in industrial research.
Abstract: Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been the major device for integrated circuits over the past two decades. With technology advancement, there have been numerous MOSFET structures for channel length of 0.1 /spl mu/m and below reported in industrial research. A side-by-side comparison of these advanced device structures can provide useful understanding in device physics and the design tradeoffs among MOSFET's parameters. In this work we employ experimental data, device simulation, and analytical modeling for device comparison. The devices were developed at several different research laboratories. Guided by experimental data and simulations, analytical models for topics such as threshold voltage, short-channel effect, and saturation current for these different MOSFET structures are developed. These analytical models are then used for optimizing each device structure and comparing the devices under the same set of constraints for a fair comparison. The key design parameters are highlighted and the strength and weakness of each device structure in various performance categories are discussed.
216 citations
11 citations
11 Jun 1996
TL;DR: In this article, a comparative study of advanced MOSFET structures for around 0.1 /spl mu/m generation in the subjects of short-channel effect, drain saturation current, and relative gate delay is presented.
Abstract: This work presents a comparative study of advanced MOSFET structures that have been proposed for around 0.1 /spl mu/m generation in the subjects of short-channel effect, drain saturation current, and relative gate delay. Our approach differs from other studies in that we emphasize compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulational data. Based on these models, key device design parameters are extracted and compared. This approach provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs. The devices in this study are : (a) uniformly-doped MOSFET, (b) delta-doped MOSFET, (c) pocket-implanted MOSFET, (d) SOI MOSFET, and (e) double-gated MOSFET. Their generic extensions cover almost every advanced MOSFET.
10 citations