다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Countless millions of people have died from tuberculosis, a chronic infectious disease caused by the tubercle bacillus. The complete genome sequence of the best-characterized strain of Mycobacterium tuberculosis, H37Rv, has been determined and analysed in order to improve our understanding of the biology of this slow-growing pathogen and to help the conception of new prophylactic and therapeutic interventions. The genome comprises 4,411,529 base pairs, contains around 4,000 genes, and has a very high guanine + cytosine content that is reflected in the biased amino-acid content of the proteins. M. tuberculosis differs radically from other bacteria in that a very large portion of its coding capacity is devoted to the production of enzymes involved in lipogenesis and lipolysis, and to two new families of glycine-rich proteins with a repetitive structure that may represent a source of antigenic variation.

/pdf/deciphering-the-biology-of-mycobacterium-tuberculosis-from-56gdir9h56.pdf

Deciphering the biology of Mycobacterium tuberculosis from the complete genome sequence

BackgroundExperimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. MethodsWe conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. ResultsAt 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in t...

https://www.nejm.org/doi/pdf/10.1056/NEJMoa1707914

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Pseudomonas aeruginosa is a ubiquitous environmental bacterium that is one of the top three causes of opportunistic human infections. A major factor in its prominence as a pathogen is its intrinsic resistance to antibiotics and disinfectants. Here we report the complete sequence of P. aeruginosa strain PAO1. At 6.3 million base pairs, this is the largest bacterial genome sequenced, and the sequence provides insights into the basis of the versatility and intrinsic drug resistance of P. aeruginosa. Consistent with its larger genome size and environmental adaptability, P. aeruginosa contains the highest proportion of regulatory genes observed for a bacterial genome and a large number of genes involved in the catabolism, transport and efflux of organic compounds as well as four potential chemotaxis systems. We propose that the size and complexity of the P. aeruginosa genome reflect an evolutionary adaptation permitting it to thrive in diverse environments and resist the effects of a variety of antimicrobial substances.

/pdf/complete-genome-sequence-of-pseudomonas-aeruginosa-pao1-an-u88d4e2n3p.pdf

Complete genome sequence of Pseudomonas aeruginosa PAO1, an opportunistic pathogen.

https://www.thelancet.com/pdfs/journals/lancet/PIIS0140-6736(00)04403-2.pdf

Whole genome sequencing of meticillin-resistant Staphylococcus aureus

To recover visual sensation of blind patients, we have proposed a novel three dimensionally (3D) stacked retinal prosthesis chip in which several LSI chips such as consisting of photodetector, signal processing circuit and stimulus current generator are vertically stacked and electrically connected using 3D integration technology. In this work, we developed several key process for realizing 3D stacked retinal prosthesis chip. Fine sized Cu TSV of 10 µm width and 30 µm depth was successfully formed from the back side of the thinned prosthesis chip. The prosthesis chip with the back side Cu TSVs was flip-chip bonded to Si substrate/flexible substrate through Cu/Sn micro-bumps for evaluating the feasibility of 3D integration technology.

3D integration technology for 3D stacked retinal chip

Using direct bonded SOI wafers just 40 nm thick, we fabricated p/sup +/-n/sup +/ double-gate SOI MOSFETs. These devices, with an appropriate Vth, have good short-channel behavior and a large drive current. For Lg=0.19 /spl mu/m, we obtained an inverter delay time of 43 ps at 1 V, and 27 ps at 2 V. These are the fastest reported values for this gate length. The high performance is attributed to the large drain current, the low series resistance, and the reduction of the parasitic drain junction capacitance. >

Ultrafast low-power operation of p/sup +/-n/sup +/ double-gate SOI MOSFETs

Objectives This study aimed to assess the anatomical leaflet variation and investigate its impact on the procedural outcome in patients undergoing transcatheter edge-to-edge tricuspid repair. Background Tricuspid regurgitation (TR) is associated with a poor prognosis. Methods The study participants were consecutive patients who underwent transcatheter edge-to-edge tricuspid repair with the MitraClip, TriClip, or PASCAL systems from June 2015 to July 2020 at the Bonn Heart Center. The tricuspid leaflet morphologies were imaged using 2-dimensional and 3-dimensional transesophageal echocardiography. The severity of TR was assessed according to the 5-grade scheme. The primary endpoint was residual TR ≥3+ within 30 days. Results Of the 145 study participants, 103 (71.1%) participants were categorized as the 3-leaflet configuration, while 42 (28.9%) were categorized as the 4-leaflet configuration. Successful device implantation was achieved in 136 (93.8%) patients, with no statistical difference between the 3-leaflet and 4-leaflet configuration groups. However, compared with patients with a 3-leaflet configuration, patients with 4-leaflet configuration more frequently had residual TR ≥3+ (18.4% vs 38.1%; P = 0.018). In the multivariable model, the 4-leaflet configuration was associated with an increased risk of residual TR ≥3+ (odds ratio: 2.65; 95% CI 1.15-6.10; P = 0.022), independent of baseline TR grade, coaptation gap width, and TR jet location. After 1-year follow-up, compared with patients with residual TR  Conclusions A 4-leaflet configuration of the tricuspid valve is observed in approximately one-third of patients undergoing transcatheter edge-to-edge tricuspid repair, which is associated with an increased risk of residual TR after the procedure.

Leaflet Configuration and Residual Tricuspid Regurgitation After Transcatheter Edge-to-Edge Tricuspid Repair

The Young's modulus (E) of Si substrate begin to noticeably decrease below 50-μm thickness. The Young's modulus in 30-μm thick Si substrate decreased by 30% compared to the modulus of 50-μm thickness. In 30-μm thick Si substrate, the lattice structure of Si atom is highly distorted. Large distortion of the lattice structure induces the Young's modulus reduction, consequently weakens the mechanical strength. A DRAM chip of 200-μm thickness is bonded to a Si interposer and thinned down to 50/40/30/20-μm thickness, respectively. The retention characteristics of DRAM cell are degraded depending on the decreasing of the chip thickness, especially dramatically degraded below 50-μm thickness. The retention time of DRAM cell in the 20- μm thick chip is shortened by ~ 40% compared to the 50-μm thick chip, regardless of the well structure (triple-well, twin-well). The distortion of the lattice structure in the thin chip effects carrier recombination rates, consequently a shortening retention time of DRAM cell.

Degradation of Memory Retention Characteristics in DRAM Chip by Si Thinning for 3-D Integration

We derived analytical models for the current-voltage characteristics of double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors. In the subthreshold region, we derived an analytical subthreshold slope model considering both depleted and induced charges. We proposed a unique definition of threshold voltage of the device, and showed that the threshold voltage is close to the experimentally defined threshold voltage at which the drain current has a specific value. The variation in the surface potential after the threshold voltage was modeled, and hence the models are valid in the moderate-inversion region as well as in the strong-inversion region. The models agree well with experimental data.

Tetsu Tanaka

Papers

3D integration technology for 3D stacked retinal chip

Ultrafast low-power operation of p/sup +/-n/sup +/ double-gate SOI MOSFETs

Leaflet Configuration and Residual Tricuspid Regurgitation After Transcatheter Edge-to-Edge Tricuspid Repair

Degradation of Memory Retention Characteristics in DRAM Chip by Si Thinning for 3-D Integration

Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors