다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Countless millions of people have died from tuberculosis, a chronic infectious disease caused by the tubercle bacillus. The complete genome sequence of the best-characterized strain of Mycobacterium tuberculosis, H37Rv, has been determined and analysed in order to improve our understanding of the biology of this slow-growing pathogen and to help the conception of new prophylactic and therapeutic interventions. The genome comprises 4,411,529 base pairs, contains around 4,000 genes, and has a very high guanine + cytosine content that is reflected in the biased amino-acid content of the proteins. M. tuberculosis differs radically from other bacteria in that a very large portion of its coding capacity is devoted to the production of enzymes involved in lipogenesis and lipolysis, and to two new families of glycine-rich proteins with a repetitive structure that may represent a source of antigenic variation.

/pdf/deciphering-the-biology-of-mycobacterium-tuberculosis-from-56gdir9h56.pdf

Deciphering the biology of Mycobacterium tuberculosis from the complete genome sequence

BackgroundExperimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. MethodsWe conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. ResultsAt 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in t...

https://www.nejm.org/doi/pdf/10.1056/NEJMoa1707914

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Pseudomonas aeruginosa is a ubiquitous environmental bacterium that is one of the top three causes of opportunistic human infections. A major factor in its prominence as a pathogen is its intrinsic resistance to antibiotics and disinfectants. Here we report the complete sequence of P. aeruginosa strain PAO1. At 6.3 million base pairs, this is the largest bacterial genome sequenced, and the sequence provides insights into the basis of the versatility and intrinsic drug resistance of P. aeruginosa. Consistent with its larger genome size and environmental adaptability, P. aeruginosa contains the highest proportion of regulatory genes observed for a bacterial genome and a large number of genes involved in the catabolism, transport and efflux of organic compounds as well as four potential chemotaxis systems. We propose that the size and complexity of the P. aeruginosa genome reflect an evolutionary adaptation permitting it to thrive in diverse environments and resist the effects of a variety of antimicrobial substances.

/pdf/complete-genome-sequence-of-pseudomonas-aeruginosa-pao1-an-u88d4e2n3p.pdf

Complete genome sequence of Pseudomonas aeruginosa PAO1, an opportunistic pathogen.

https://www.thelancet.com/pdfs/journals/lancet/PIIS0140-6736(00)04403-2.pdf

Whole genome sequencing of meticillin-resistant Staphylococcus aureus

The effect of CVD Mn oxide layer as a barrier layer to Cu diffusion for 3-D TSV was characterized. The impact of oxide substrate on the barrier property of a planar Mn oxide was evaluated by XPS method. Planar Mn oxide layer of 20-nm thickness formed over thermal oxide showed an excellent barrier property to Cu diffusion after annealing at 500°C, whereas the Mn oxide over P-TEOS oxide was good enough up to 400°C annealing. On the other hand, the barrier property of Mn oxide upon O3-TEOS oxide was not as good as thermal and P-TEOS oxides. The effect of a vertical Mn oxide layer as a barrier layer to Cu diffusion from Cu TSV was evaluated by C-t analysis. Vertical Mn oxide layer with 20-nm thickness formed on P-TEOS oxide liner in TSV showed better barrier property, when compared with the sputtered Ta barrier layer, up to 400°C annealing condition. However, the barrier property of CVD Mn oxide layer was degraded after annealing at 500°C.

Barrier Properties of CVD Mn Oxide Layer to Cu Diffusion for 3-D TSV

Low-resistance copper-tin (Cu-Sn) microbumps, with sizes varying from 5 μm × 5 μm to 20 μm × 20 μm and formed by electroplating–evaporation bumping (EEB) technology for three-dimensional integration of large-scale integrated chips, have been evaluated for their microstructure and electrical resistance. It was inferred from x-ray diffraction data that the formation of low-resistance Cu3Sn intermetallic compound (IMC) is facilitated at higher bonding temperature. Electron probe microanalysis mapping showed that, even before bonding, Cu-Sn IMCs were formed at the interface between Cu and Sn, whereas they were sandwiched between the Cu of the upper and lower microbumps after bonding. Electron backscatter diffraction analysis revealed that the crystal orientation of Sn grains was sharply localized in the (100) orientation for physical vapor deposited (PVD) sample, while electroplated Sn film exhibited a mixed crystal orientation in all (100), (110), and (001) axes. A resistance value of ~35 mΩ per bump was obtained for Cu-Sn microbumps with area of 400 μm2, which is several times lower than the resistance value reported for Cu-Sn microbumps fabricated by a pure electroplating method. The low resistance value obtained for EEB-formed Cu-Sn microbumps after bonding is explained by (i) the reduced surface roughness for evaporated Sn, (ii) the high degree of crystal grain orientation resulting from layer-by-layer growth in the PVD Sn, despite their smaller grain size, and (iii) the absence of impurity segregation at grain boundaries.

Low-Resistance Cu-Sn Electroplated–Evaporated Microbumps for 3D Chip Stacking

A three-dimensional LSI (3D-LSI) that vertically stacks Si chips with a number of through-silicon vias (TSVs) and metal microbumps has attracted much attention recently. However, there are some issues to be resolved in the fabrication of 3D-LSI. In this study, we investigated impacts of local bending stress on the performance of a complementary metal–oxide–semiconductor (CMOS) circuit fabricated in a thinned Si chip. First, we proposed a novel method and a test structure to easily induce the local bending stress in the thinned Si chip. Then, we evaluated the distribution of the local bending stress and its effects on the electrical characteristics of metal–oxide–semiconductor field-effect transistor (MOSFETs). As a result, we observed the degradations of the MOSFET currents and CMOS inverter switching behaviors in accordance with the chip local bending. Our experimental results obviously indicate that the local bending stress caused large fluctuations in the performance of the circuit fabricated in the thinned Si chip.

https://iopscience.iop.org/article/10.7567/JJAP.52.04CB11/pdf

Investigation of Local Bending Stress Effect on Complementary Metal–Oxide–Semiconductor Characteristics in Thinned Si Chip for Chip-to-Wafer Three-Dimensional Integration

We demonstrate the chip-based 3D heterogeneous integration technology for realizing highly parallel 3D-stacked image sensor. Three kinds of chips, CMOS image sensor chip, analog circuit chip, and ADC array chip, which were fabricated by different technologies, are processed and stacked vertically to form a prototype 3D-stacked image sensor. Through-Si vias (TSVs) and metal micro-bumps are formed in chip-level before stacking. The fundamental characteristics are evaluated in the fabricated prototype 3D-stacked image sensor.

Tetsu Tanaka

Papers

Barrier Properties of CVD Mn Oxide Layer to Cu Diffusion for 3-D TSV

Low-Resistance Cu-Sn Electroplated–Evaporated Microbumps for 3D Chip Stacking

Investigation of Local Bending Stress Effect on Complementary Metal–Oxide–Semiconductor Characteristics in Thinned Si Chip for Chip-to-Wafer Three-Dimensional Integration

Characterization of chip-level hetero-integration technology for high-speed, highly parallel 3D-stacked image processing system

Wireless relay system, apparatus and method