다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Countless millions of people have died from tuberculosis, a chronic infectious disease caused by the tubercle bacillus. The complete genome sequence of the best-characterized strain of Mycobacterium tuberculosis, H37Rv, has been determined and analysed in order to improve our understanding of the biology of this slow-growing pathogen and to help the conception of new prophylactic and therapeutic interventions. The genome comprises 4,411,529 base pairs, contains around 4,000 genes, and has a very high guanine + cytosine content that is reflected in the biased amino-acid content of the proteins. M. tuberculosis differs radically from other bacteria in that a very large portion of its coding capacity is devoted to the production of enzymes involved in lipogenesis and lipolysis, and to two new families of glycine-rich proteins with a repetitive structure that may represent a source of antigenic variation.

/pdf/deciphering-the-biology-of-mycobacterium-tuberculosis-from-56gdir9h56.pdf

Deciphering the biology of Mycobacterium tuberculosis from the complete genome sequence

BackgroundExperimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. MethodsWe conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. ResultsAt 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in t...

https://www.nejm.org/doi/pdf/10.1056/NEJMoa1707914

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Pseudomonas aeruginosa is a ubiquitous environmental bacterium that is one of the top three causes of opportunistic human infections. A major factor in its prominence as a pathogen is its intrinsic resistance to antibiotics and disinfectants. Here we report the complete sequence of P. aeruginosa strain PAO1. At 6.3 million base pairs, this is the largest bacterial genome sequenced, and the sequence provides insights into the basis of the versatility and intrinsic drug resistance of P. aeruginosa. Consistent with its larger genome size and environmental adaptability, P. aeruginosa contains the highest proportion of regulatory genes observed for a bacterial genome and a large number of genes involved in the catabolism, transport and efflux of organic compounds as well as four potential chemotaxis systems. We propose that the size and complexity of the P. aeruginosa genome reflect an evolutionary adaptation permitting it to thrive in diverse environments and resist the effects of a variety of antimicrobial substances.

/pdf/complete-genome-sequence-of-pseudomonas-aeruginosa-pao1-an-u88d4e2n3p.pdf

Complete genome sequence of Pseudomonas aeruginosa PAO1, an opportunistic pathogen.

https://www.thelancet.com/pdfs/journals/lancet/PIIS0140-6736(00)04403-2.pdf

Whole genome sequencing of meticillin-resistant Staphylococcus aureus

Chip-to-wafer bonding is a promising technology for 3D integration due to high production yield using known good dies (KGDs). However, conventional chip-to-wafer 3D integration lowers production throughput because pick-and-place chip assembly is employed. To overcome the problem, we proposed a new chip-to-wafer 3D integration using self-assembly by which many KGDs can be simultaneously, rapidly, and precisely aligned and tightly bonded on wafers. The driving force is liquid surface tension. Here, we used an aqueous solution including dilute HF. In this paper, we discuss the dependence of alignment accuracy on several parameters in self-assembly conditions. In addition, we describe mechanism on HF-assisted direct chip bonding to wafers without thermal compression.

Evaluation of alignment accuracy on chip-to-wafer self-assembly and mechanism on the direct chip bonding at room temperature

In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1–1.5 nm) and high density (∼1.3×1013/cm2) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high-k HfO2 blocking dielectric. A wide range memory window (0–29 V) was obtained after bidirectional gate voltages sweeping with range of ±1–±23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.

Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

In this letter, tungsten nanodots (W-NDs) in silicon nitride formed by a self-assembled nanodot deposition method have been investigated as a floating gate of nonvolatile memory (NVM). Observations from transmission electron microscopy and x-ray diffraction pattern clearly confirm the formation of crystallized W-NDs with a diameter of ∼5 nm. The metal-oxide-semiconductor device with W-NDs in silicon nitride exhibits a larger memory window (∼4.1 V at ±12 V sweep), indicating charge trapping and distrapping between the W-ND and a silicon substrate. The program/erase behaviors and data retention characteristics were evaluated. After 10 years retention, a large memory window of ∼3.4 V with a low charge loss of ∼15% was extrapolated. These results demonstrate advantages of W-NDs in silicon nitride for the NVM application.

Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride

Hemodynamic correlates of nutritional indexes in heart failure.

A new magnetic nanodot (MND) memory with FePt nanodots was proposed. The FePt nanodots dispersed in SiO2 insulating film was successfully fabricated by self-assembled nanodot deposition (SAND). The size of the FePt nanodot can be controlled by SAND with a different target area ratio of the FePt pellets area in the SiO2 target. Thermal annealing converts the magnetic properties of the FePt nanodots from antiferromagnetic into high coercivity ferromagnetic without thermal agglomeration. An L10 face-centered tetragonal (fct) FePt MND film was successfully formed which acted as a charge retention layer. Furthermore, the fundamental characteristics of the MND memory were investigated using magnetic metal oxide semiconductor (MOS) capacitor devices.

https://iopscience.iop.org/article/10.1143/JJAP.46.2167/pdf

Tetsu Tanaka

Papers

Evaluation of alignment accuracy on chip-to-wafer self-assembly and mechanism on the direct chip bonding at room temperature

Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride

Hemodynamic correlates of nutritional indexes in heart failure.

New magnetic nanodot memory with FePt nanodots