T
Tetsu Tanaka
Researcher at Tohoku University
Publications - 423
Citations - 11239
Tetsu Tanaka is an academic researcher from Tohoku University. The author has contributed to research in topics: Wafer & Chip. The author has an hindex of 38, co-authored 406 publications receiving 10375 citations. Previous affiliations of Tetsu Tanaka include NTT DoCoMo & Tokyo Medical and Dental University.
Papers
More filters
Journal ArticleDOI
Investigation of TSV Liner Interface With Multiwell Structured TSV to Suppress Noise Propagation in Mixed-Signal 3D-IC
TL;DR: In this paper, the effect of noise propagation from a digital circuit on an analog circuit was evaluated using an actual mixed-signal 3D-IC, with a ring-oscillator as a noise source.
Patent
Chip support substrate, chip support method, three-dimensional integrated circuit, assembly device, and fabrication method of three-dimensional integrated circuit
TL;DR: In this article, a chip support substrate including a lyophilic region 4 that is formed on the substrate and that absorbs a chip 3 A, and an electrode 6 that was formed on a substrate and in the lyphilic region and that generated electrostatic force in the chip, was described.
Journal ArticleDOI
Self-Assembly and Electrostatic Carrier Technology for Via-Last TSV Formation Using Transfer Stacking-Based Chip-to-Wafer 3-D Integration
H. Hashiguchi,Takafumi Fukushima,Hiroyuki Hashimoto,Jicheol Bea,Mariappan Murugesan,Hisashi Kino,Tetsu Tanaka,Mitsumasa Koyanagi +7 more
TL;DR: In this paper, a self-assembly and electrostatic (SAE) carrier technology is developed for high-precision and high-throughput chip-to-wafer 3D integration.
Journal ArticleDOI
Deteriorated Device Characteristics in 3D-LSI Caused by Distorted Silicon Lattice
Murugesan Mariappan,Yasuhiko Imai,Shigeru Kimura,Takafumi Fukushima,Jichoel Bea,Hisashi Kino,Kang-Wook Lee,Tetsu Tanaka,Mitsumasa Koyanagi +8 more
TL;DR: In this article, a 50-μm-thick stacked large scale integrated circuit (LSI) chip over Cu-Sn μ-bumps was studied by synchrotron-assisted micro-X-ray diffraction.
Proceedings ArticleDOI
A study on millisecond annealing (MSA) induced layout dependence for flash lamp annealing (FLA) and laser spike annealing (LSA) in multiple MSA scheme with 45 nm high-performance technology
T. Miyashita,Tomohiro Kubo,Y. S. Kim,M. Nishikawa,Y. Tamura,J. Mitani,M. Okuno,Tetsu Tanaka,Hideo Suzuki,T. Sakata,T. Kodama,T. Itakura,N. Idani,Toshihiko Mori,Y. Sambonsugi,A. Shimizu,H. Kurata,Toshiro Futatsugi +17 more
TL;DR: In this article, the dependence of temperature uniformity dufing millisecond annealing (MSA) on the pattern density and its effect on device characteristics and static random access memory (SRAM) yields with 45-nm node technology was investigated.