T
Th. Nirschl
Researcher at Technische Universität München
Publications - 9
Citations - 720
Th. Nirschl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Field-effect transistor & MOSFET. The author has an hindex of 6, co-authored 9 publications receiving 638 citations. Previous affiliations of Th. Nirschl include Infineon Technologies.
Papers
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Journal ArticleDOI
Complementary tunneling transistor for low power application
Peng-Fei Wang,K. Hilsenbeck,Th. Nirschl,M. Oswald,Ch. Stepper,M. Weis,Doris Schmitt-Landsiedel,Walter Hansch +7 more
TL;DR: In this paper, the complementary Si-based tunneling transistors are investigated in detail, and it is found that the band-to-band tunneling current is controlled by the gate-tosource voltage.
Journal ArticleDOI
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Th. Nirschl,Th. Nirschl,S. Henzler,J. Fischer,M. Fulde,A. Bargagli-Stoffi,M. Sterkel,J. Sedlmeir,Cory E. Weber,R. Heinrich,U. Schaper,J. Einfeld,R. Neubert,U. Feldmann,Knut Stahrenberg,E. Ruderer,Georg Georgakos,A. Huber,R. Kakoschke,Walter Hansch,Doris Schmitt-Landsiedel +20 more
TL;DR: In this article, the scaling properties of TFETs were investigated using standard 130nm, 90nm, and 65nm CMOS process flows. But the TFET dependence on the design parameters, i.e. channel width and length, is comparable to that of the standard MOSFET.
Proceedings ArticleDOI
The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes
Th. Nirschl,Peng-Fei Wang,Cory E. Weber,J. Sedlmeir,R. Heinrich,R. Kakoschke,K. Schrufer,J. Holz,Christian Pacha,T. Schulz,Martin Ostermayr,Alexander Olbrich,Georg Georgakos,E. Ruderer,Walter Hansch,Doris Schmitt-Landsiedel +15 more
TL;DR: In this paper, a novel mixed TFET/CMOS (TCMOS) logic family exhibits the advantages with respect to power consumption, and the benefits of the TFET used in analog circuits are outlined.
Proceedings Article
Scaling properties of the tunneling field effect transistor (TFET) : Device and circuit
Th. Nirschl,Henzler,J. Fischer,M. Fulde,A. Bargagli-Stoffi,M. Sterkel,J. Sedlmeir,Cory E. Weber,R. Heinrich,U. Schaper,J. Einfeld,R. Neubert,U. Feldmann,Knut Stahrenberg,E. Ruderer,Georg Georgakos,A. Huber,R. Kakoschke,Walter Hansch,Doris Schmitt-Landsiedel +19 more
TL;DR: In this paper, the scaling properties of TFETs were investigated using standard 130 nm, 90 nm, and 65 nm CMOS process flows. But the TFET dependence on the design parameters, i.e. channel width and length, is comparable to that of the standard MOSFET.
Proceedings ArticleDOI
Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs
M. Fulde,A. Heigl,M. Weis,M. Wirnshofer,Klaus Von Arnim,Th. Nirschl,M. Sterkel,G. Knoblinger,Walter Hansch,Gerhard Wachutka,Doris Schmitt-Landsiedel +10 more
TL;DR: In this article, the authors present fabrication, optimization and application aspects of complementary multiple-gate tunneling FETs (MuGTFETs) for the first time, and demonstrate the scaling potential of multigated tunneling devices by measurements and device simulations.