T
Theodore D. Moustakas
Researcher at Boston University
Publications - 358
Citations - 12801
Theodore D. Moustakas is an academic researcher from Boston University. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 58, co-authored 358 publications receiving 12357 citations. Previous affiliations of Theodore D. Moustakas include IBM & ExxonMobil.
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Scattering of electrons at threading dislocations in GaN
TL;DR: In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.
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Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
TL;DR: In this article, the growth of InGaN thick films and InGal−xN/GaN double heterostructures by molecular beam epitaxy at the substrate temperatures 700-800°C was reported.
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The role of dislocation scattering in n-type GaN films
TL;DR: In this paper, the lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy doped n type with Si to the levels of 1015-1020 cm−3 was investigated.
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Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
TL;DR: In this article, GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma assisted molecular beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is growing at higher temperatures.
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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
TL;DR: In this paper, the zinc blende and wurtzitic GaN films have been epitaxially grown onto (001)Si by electron cyclotron resonance microwave plasma assisted molecular beam epitaxy, using a two-step growth process.