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Theodore Gudmundsen

Researcher at Massachusetts Institute of Technology

Publications -  13
Citations -  2429

Theodore Gudmundsen is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Qubit & Flux qubit. The author has an hindex of 8, co-authored 13 publications receiving 1959 citations. Previous affiliations of Theodore Gudmundsen include Cornell University.

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Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect.

TL;DR: It is suggested that the SHE torque also affects current-driven magnetic domain wall motion in Pt/ferromagnet bilayers and can enable memory and logic devices with similar critical currents and improved reliability compared to conventional spin-torque switching.
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The flux qubit revisited to enhance coherence and reproducibility.

TL;DR: The design and fabrication of the superconducting flux qubit is revisited, achieving a planar device with broad-frequency tunability, strong anharmonicity, high reproducibility and relaxation times in excess of 40 μs at its flux-insensitive point.
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Coherence and Decay of Higher Energy Levels of a Superconducting Transmon Qubit

TL;DR: Measurements of coherence and successive decay dynamics of higher energy levels of a superconducting transmon qubit and a direct measurement of the charge dispersion of these levels by analyzing beating patterns in Ramsey fringes demonstrate the feasibility of using higher levels intransmon qubits for encoding quantum information.
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Thermal and Residual Excited-State Population in a 3D Transmon Qubit.

TL;DR: A systematic study of the first-excited-state population in a 3D transmon superconducting qubit mounted in a dilution refrigerator with a variable temperature to conclude that these qubits have effective temperature T(eff)=35 mK.
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Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode

TL;DR: In this article, a Co/Ni switching layer was used to reduce the demagnetizing field via interface anisotropy in MgO-barrier magnetic tunnel junctions.