scispace - formally typeset
Search or ask a question
Author

Thomas Detzel

Other affiliations: Max Planck Society
Bio: Thomas Detzel is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Layer (electronics) & Power semiconductor device. The author has an hindex of 14, co-authored 48 publications receiving 763 citations. Previous affiliations of Thomas Detzel include Max Planck Society.

Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, a comprehensive study on the mechanical behavior of plasma enhanced chemical vapor deposited silicon oxide, oxynitride and nitride thin films is provided, and the results are compared with standard nanoindentation measurements.

220 citations

Journal ArticleDOI
TL;DR: In this article, the drain-source capacitance of double-field-plate power AlGaN/GaN HEMTs with C-doped buffers is modeled as a carbon doping mechanism.
Abstract: Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on increase can accurately be reproduced by numerical device simulations that assume the CN-CGa autocompensation model as carbon doping mechanism. Current-collapse effects much larger than experimentally observed are instead predicted by simulations if C doping is accounted by dominant acceptor states. This suggests that buffer growth conditions favoring CN-CGa autocompensation can allow for the fabrication of power AlGaN/GaN HEMTs with reduced current-collapse effects. The drain-source capacitance of these devices is found to be a sensitive function of the C doping model, suggesting that its monitoring can be adopted as a fast technique to assess buffer compensation properties.

95 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the mechanical behavior of interfaces between silicon oxide and metallic thin films using an alternative approach which is based on the miniaturized cantilever deflection technique.
Abstract: The mechanical behavior of interfaces between silicon oxide and metallic thin films is investigated using an alternative approach which is based on the miniaturized cantilever deflection technique (Weihs et al., 1988 [1]). The critical energy release rates for three different silicon oxide/metal systems are determined and the results are discussed in this paper. The technique suggested may be applicable with high spatial resolution for a wide variety of structured thin film systems.

78 citations

Journal ArticleDOI
TL;DR: In this article, the self-annealing effect of electroplated copper films was investigated by measuring the time dependence of the film stress and sheet resistance for different layer thicknesses between 1.5 and 20?m.
Abstract: Electroplated copper films are known to change their microstructure due to the self-annealing effect. The self-annealing effect of electroplated copper films was investigated by measuring the time dependence of the film stress and sheet resistance for different layer thicknesses between 1.5 and 20 ?m. While the sheet resistance was found to decrease as time elapsed, a size-dependent change in film stress was observed. Films with the thickness of 5 ?m and below decrease in stress, while thicker films initially reveal an increase in film stress followed by a stress relaxation at a later stage. This behavior is explained by the superposition of grain growth and grain-size-dependent yielding.

59 citations

Journal ArticleDOI
TL;DR: In this article, the degradation of GaN-based HEMTs with p-type gate submitted to positive gate bias stress was investigated based on combined electrical and optical testing, and the existence of different degradation processes, depending on the applied stress voltage was demonstrated.
Abstract: This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive gate bias stress. Based on combined electrical and optical testing, we demonstrate the existence of different degradation processes, depending on the applied stress voltage ${V}_{\textsf {Gstress}}$ : 1) for ${V}_{\textsf {Gstress}} V, no significant degradation is observed, thus demonstrating a good stability of the analyzed technology; 2) for 7 V $ V, a negative shift in threshold voltage ( ${V}_{\textsf {th}}$ ) is observed, well correlated with a decrease in the gate leakage current and of the luminescence signal associated with hole injection. The negative ${V}_{\textsf {th}}$ shift is ascribed to the trapping of holes in the AlGaN and/or p-GaN/AlGaN interface; and 3) for ${V}_{\textsf {Gstress}} \ge \textsf {12}$ V, threshold voltage recovers its initial value. This is ascribed to a net-negative charge, generated either by the trapping of electrons injected from the 2-D electron gas to the AlGaN or to the de-trapping of the holes injected in 2). The results described within this paper provide relevant information for understanding the degradation dynamics of normally off GaN transistors submitted to extremely high gate voltage levels far beyond maximum use.

57 citations


Cited by
More filters
01 Sep 2010

2,148 citations

01 Jan 1999
TL;DR: Damascene copper electroplating for on-chip interconnections, a process that was conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition as discussed by the authors.
Abstract: Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

1,006 citations

Journal ArticleDOI
TL;DR: The state of the art in condition monitoring for power electronics can be found in this paper, where the authors present a review of the current state-of-the-art in power electronics condition monitoring.
Abstract: Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

820 citations

Journal ArticleDOI
TL;DR: The fabrication of hollow ceramic scaffolds that mimic the length scales and hierarchy of biological materials are reported, suggesting that the hierarchical design principles offered by hard biological organisms can be applied to create damage-tolerant lightweight engineering materials.
Abstract: Creating lightweight, mechanically robust materials has long been an engineering pursuit. Many siliceous skeleton species— such as diatoms, sea sponges and radiolarians—have remarkably high strengths when compared with man-made materials of the same composition, yet are able to remain lightweight and porous1–7. It has been suggested that these properties arise from the hierarchical arrangement of different structural elements at their relevant length scales8,9. Here, we report the fabrication of hollow ceramic scaffolds that mimic the length scales and hierarchy of biological materials. The constituent solids attain tensile strengths of 1.75 GPa without failure even after multiple deformation cycles, as revealed by in situ nanomechanical experiments and finite-element analysis. We discuss the high strength and lack of failure in terms of stress concentrators at surface imperfections and of local stresses within the microstructural landscape. Our findings suggest that the hierarchical design principles offered by hard biological organisms can be applied to create damage-tolerant lightweight engineering materials.

425 citations

Journal ArticleDOI
TL;DR: In this paper, the authors summarize past developments and recent advances in the area of condition monitoring and prognostics for IGBT modules and provide recommendations for future research topics in the CM and prognostic areas.
Abstract: Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of renewable energy, hybrid/electric vehicles, and industrial equipment. For safety-critical and mission-critical applications, the reliability of IGBT modules is still a concern. Understanding the physics-of-failure of IGBT modules has been critical to the development of effective condition monitoring (CM) techniques as well as reliable prognostic methods. This review paper attempts to summarize past developments and recent advances in the area of CM and prognostics for IGBT modules. The improvement in material, fabrication, and structure is described. The CM techniques and prognostic methods proposed in the literature are presented. This paper concludes with recommendations for future research topics in the CM and prognostics areas.

341 citations