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Author

Thomas Fischer

Other affiliations: Graz University of Technology
Bio: Thomas Fischer is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Etching (microfabrication) & Wafer. The author has an hindex of 7, co-authored 37 publications receiving 135 citations. Previous affiliations of Thomas Fischer include Graz University of Technology.

Papers
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Patent
29 Apr 2002
TL;DR: In this article, the first forward processed semiconductor wafer (11) of a batch in a process device (1) is measured for values for structural parameters (30), a second or other semiconducted wafers (12) of the batch is/are processed in said process device(1).
Abstract: While the first forward processed semiconductor wafer (11) of a batch in a process device (1) is measured for values for structural parameters (30), a second or other semiconductor wafers (12) of the batch is/are processed in said process device (1). A result signal (100) indicates a successfully conducted inspection of the first wafer for example, whereupon the subsequent wafers (12) do not need to be examined. The process parameters (31) of the process device (1) are automatically adjusted according to the measuring results. Events such as maintenance or parameter drift in trend cards etc. are detected in control units (8 or 9) and lead to event-related selection of the structural parameters (30') and/or initiation of a forward wafer (11) by outputting an event signal (102) e.g. in an event data bank (40).A warning signal (101) is issued by a control unit (8) in response to detected threshold value infringements (21) for at least one process parameter (31) and is also fed into the event data base (40).

16 citations

Patent
01 Oct 2013
TL;DR: In this paper, an arrangement may include a die including at least one electronic component and a first terminal on a first side of the die and a second terminal on the second side opposite the first side.
Abstract: An arrangement is provided. The arrangement may include: a die including at least one electronic component and a first terminal on a first side of the die and a second terminal on a second side of the die opposite the first side, wherein the first side being the main processing side of the die, and the die further including at least a third terminal on the second side; a first electrically conductive structure providing current flow from the third terminal on second side of the die to the first side through the die; a second electrically conductive structure on the first side of the die laterally coupling the second terminal with the first electrically conductive structure; and an encapsulation material disposed at least over the first side of the die covering the first terminal and the second electrically conductive structure.

15 citations

Patent
27 Mar 2012
TL;DR: In this article, a semiconductor package includes a vertical semiconductor chip having a first major surface on one side of the VSS and a second major surface in the opposite side of VSS.
Abstract: In one embodiment, a semiconductor package includes a vertical semiconductor chip having a first major surface on one side of the vertical semiconductor chip and a second major surface on an opposite side of the vertical semiconductor chip. The first major surface includes a first contact region and the second major surface includes a second contact region. The vertical semiconductor chip is configured to regulate flow of current from the first contact region to the second contact region along a current flow direction. A back side conductor is disposed at the second contact region of the second major surface. The semiconductor package further includes a first encapsulant in which the vertical semiconductor chip and the back side conductor are disposed.

11 citations

Proceedings ArticleDOI
08 Jan 2021
TL;DR: In this paper, a blockchain-based shared mobility platform is proposed and a proof-of-concept is shown, where a decentralized concept is built based on ERC-721 tokens, implemented in a smart contract, and augmented with a Hardware Security Module (HSM) to protect the confidential key material.
Abstract: Transportation of people and goods is important and crucial in the context of smart cities. The trend in regard of people's mobility is moving from privately owned vehicles towards shared mobility. This trend is even stronger in urban areas, where space for parking is limited, and the mobility is supported by the public transport system, which lowers the need for private vehicles. Several challenges and barriers of currently available solutions retard a massive growth of this mobility option, such as the trust problem, data monopolism, or intermediary costs. Decentralizing mobility management is a promising approach to solve the current problems of the mobility market, allowing to move towards a more usable internet of mobility and smart transportation. Leveraging blockchain technology allows to cut intermediary costs, by utilizing smart contracts. Important in this ecosystem is the proof of identity of participants in the blockchain network. To proof the possession of the claimed identity, the private key corresponding to the wallet address is utilized, and therefore essential to protect. In this paper, a blockchain-based shared mobility platform is proposed and a proof-of-concept is shown. First, current problems and state-of-the-art systems are analyzed. Then, a decentralized concept is built based on ERC-721 tokens, implemented in a smart contract, and augmented with a Hardware Security Module (HSM) to protect the confidential key material. Finally, the system is evaluated and compared against state-of-the-art solutions.

11 citations

Patent
26 Sep 2007
TL;DR: In this paper, the authors present implementations of a memory cell, a memory device, a device and a method of accessing a memory cells, which relate to the memory cell and the memory device.
Abstract: Implementations are presented herein that relate to a memory cell, a memory device, a device and a method of accessing a memory cell.

11 citations


Cited by
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Patent
28 Jan 2008
TL;DR: In this article, a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is described, which includes a first radiation dose detector and a second radiation dose detectors, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux.
Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

451 citations

Patent
09 Jul 2013
TL;DR: In this paper, the relation between the wavelength of the pulsed laser beam and the pulse width generating no cracks is determined by experiment on the basis of the absorption edge of the workpiece, thereby setting the processing conditions.
Abstract: A laser processing method of applying a pulsed laser beam having a repetition frequency of 20 kHz or more to a workpiece to thereby process the workpiece. The relation between the wavelength of the pulsed laser beam and the pulse width generating no cracks is determined by experiment on the basis of the absorption edge of the workpiece, thereby setting the processing conditions. The relation between various set values for the wavelength and the limits of the pulse width is plotted to prepare a graph having a vertical axis representing the wavelength and a horizontal axis representing the pulse width. The pulsed laser beam is applied in the region below a curve obtained by connecting the limits of the pulse width at the various set values for the wavelength.

85 citations

Patent
Jung-Kyu Kim1
04 Jan 2013
TL;DR: A semiconductor device includes a N-type field effect transistor comprising a n-channel region in a substrate as mentioned in this paper, and a high dielectric constant (high-k) layer is disposed on the high-k region.
Abstract: A semiconductor device includes a N-type field effect transistor comprising a N-channel region in a substrate. A high dielectric constant (high-k) layer is disposed on the N-channel region. A diffusion layer including a metal oxide is disposed on the high-k layer. A passivation layer is disposed on the diffusion layer, and a first metal gate is disposed on the passivation layer. The first high-k layer and the N-channel region include metal atoms of a metal element of the metal oxide.

51 citations