T
Thomas Frank
Researcher at University of Erlangen-Nuremberg
Publications - 33
Citations - 935
Thomas Frank is an academic researcher from University of Erlangen-Nuremberg. The author has contributed to research in topics: Deep-level transient spectroscopy & Ion implantation. The author has an hindex of 14, co-authored 33 publications receiving 896 citations.
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Doping of SiC by Implantation of Boron and Aluminum
TL;DR: In this article, aluminum and boron implantation in 4H/6H SiC was investigated, and the degree of electrical activity of implanted Al/B atoms was determined as a function of the annealing temperature.
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Properties of the oxygen vacancy in ZnO
Detlev M. Hofmann,D. Pfisterer,Joachim Sann,Bruno K. Meyer,Ramón Tena-Zaera,Vicente Muñoz-Sanjosé,Thomas Frank,Gerhard Pensl +7 more
TL;DR: In this paper, deep level transient spectroscopy (DLTS) results suggest a correlation between the broad unstructured emission at 2.45 eV (green band) and a donor level 530 eV below the conduction band, it is attributed to the VO 0/++ transition.
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Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
Gerhard Pensl,Svetlana Beljakowa,Thomas Frank,Kun‐Yuan Gao,Florian Speck,Thomas Seyller,Lothar Ley,Florin Ciobanu,Valery V. Afanas'ev,Andre Stesmans,Tsunenobu Kimoto,Adolf Schöner +11 more
TL;DR: In this paper, a model is proposed to explain the passivation of interface traps in n-type 4H-SiC MOS capacitors, which leads to a strong reduction of Dit and a large negative flatband voltage.
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SiC MATERIAL PROPERTIES
Gerhard Pensl,Florin Ciobanu,Thomas Frank,Michael Krieger,Sergey A. Reshanov,Frank Schmid,Michael Weidner +6 more
TL;DR: In this paper, the authors summarized device-relevant material properties of wide bandgap semiconductor silicon carbide polytypes, including 4H-, 6H- and 3C-SiC.
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Energetically deep defect centers in vapor-phase grown zinc oxide
Thomas Frank,Gerhard Pensl,Ramón Tena-Zaera,Jesús Zúñiga-Pérez,C. Martínez-Tomás,Vicente Muñoz-Sanjosé,Takeshi Ohshima,Hisayoshi Itoh,Detlev M. Hofmann,D. Pfisterer,Joachim Sann,Bruno K. Meyer +11 more
TL;DR: In this article, the generation of defect center E4 subsequent to annealing in different ambients was monitored by conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to [1] only the zn-Lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished.