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Thomas W. Andre
Researcher at Freescale Semiconductor
Publications - 62
Citations - 945
Thomas W. Andre is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Sense amplifier & Magnetoresistive random-access memory. The author has an hindex of 16, co-authored 62 publications receiving 913 citations. Previous affiliations of Thomas W. Andre include Motorola.
Papers
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Journal ArticleDOI
A 4-Mb 0.18-/spl mu/m 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers
Thomas W. Andre,Joseph J. Nahas,Chitra K. Subramanian,Bradley J. Garni,H. Lin,A. Omair,W.L. Martino +6 more
TL;DR: In this article, a 4Mb toggle MRAM with a 1.55/spl mu/m/sup 2/bit cell with a single toggling magneto tunnel junction is presented.
Patent
Sense amplifier bias circuit for a memory having at least two distinct resistance states
TL;DR: In this paper, a bias circuit (112, 212, 312, 412) uses a current reference (108) for providing a reference current and control circuitry (106, 120) to bias a sense amplifier (114) with a varying voltage (VB).
Proceedings ArticleDOI
Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications
Sanjeev Aggarwal,Kerry Joseph Nagel,G. Shimon,J. J. Sun,Thomas W. Andre,Syed M. Alam,Hamid Almasi,M. DeHerrera,Brian M. Hughes,Sumio Ikegawa,J. Janesky,H. K. Lee,H. Lu,Frederick B. Mancoff +13 more
TL;DR: In this article, the authors describe a fully functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions.
Patent
MRAM and methods for reading the MRAM
M. Durlam,Thomas W. Andre,Mark F. Deherrera,Bradley N. Engel,Bradley J. Garni,Joseph J. Nahas,Nicholas D. Rizzo,Saied N. Tehrani +7 more
TL;DR: In this article, an MRAM is provided that minimizes the limits in MRAM density imposed by utilization of an isolation or select device in each memory cell, and methods are provided for reading an MTJ in a ganged memory cell of the MRAM.
Patent
Sense amplifier for a memory having at least two distinct resistance states
TL;DR: In this paper, the sense amplifiers use either current biasing or voltage biasing to apply a sensing voltage within a predetermined voltage range across the bit cells, which is balanced by the circuit designs.