Tigran T. Mnatsakanov

Bio: Tigran T. Mnatsakanov is an academic researcher from Moscow Power Engineering Institute. The author has contributed to research in topics: Diode & Thyristor. The author has an hindex of 16, co-authored 57 publications receiving 987 citations.

Carrier mobility model for GaN

Abstract: Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T ⩽1000 K) and concentration (10 14 ⩽ N ⩽10 19 cm −3 ) ranges. The dependence of the temperature T m at which the mobility μ is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices.

Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices

Abstract: New transport equations for charge carriers in semiconductors are proposed. In addition to the usual drift and diffusion, extra terms represent electron-hole scattering. A generalized form of the Einstein relation in the case of a strong electron-hole scattering is established. The matrix form of the Einstein relation enables the calculation of an effective algorithm for the solution of basic transport equations. This algorithm was used for calculating the current-voltage characteristics of test structures. Analysis has shown that incorrect treatment of electron-hole collisions in previous models leads to over rating of their contribution to the current-voltage characteristics of silicon multilayer structures.

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

Abstract: For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most important parameter of the diodes, the minority carrier lifetime, is measured by different techniques. A qualitative analysis and a computer simulation have been carried out to clarify the origin of these contradictions. For 4H-SiC p/sup +/n diodes with 6 kV blocking capability, data on residual voltage drop at high current densities, switch-on time, reverse current recovery, and post-injection voltage decay are analyzed. It is shown that the whole set of experimental data can be explained by the existence of a thin (l/spl sim/0.1 /spl mu/m) layer near the metallurgical boundary of the p/sup +/n junction with very small carrier lifetime /spl tau//sub l/ that is essentially smaller than the carrier lifetime /spl tau/ across the remaining part of the 50-/spl mu/m n-base. It is emphasized that the existence of such a layer allows, under certain conditions, the combination of a relatively low residual forward voltage drop and very fast reverse recovery. Approaches to minority carrier lifetime measurements are discussed.

Carrier mobility model for simulation of SiC-based electronic devices

Abstract: Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperature and concentration. The obtained results can be directly used for the computer simulation of SiC-based devices. Different approaches to the analytical approximation of SiC parameters are critically correlated and analysed.

Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level

Abstract: Experimental data on electron and hole mobility in three silicon carbide polytypes, 4H-SiC, 6H-SiC, and 3C-SiC, are analyzed. A semiempirical model is proposed for describing the dependence of the majority carrier mobility on temperature and doping level. The model describes well the accumulated body of experimental data and can be applied to model characteristics of multilayer silicon carbide structures.

Visible-Light Driven Overall Conversion of CO2 and H2O to CH4 and O2 on 3D-SiC@2D-MoS2 Heterostructure.

Abstract: A marigold-like SiC@MoS2 nanoflower with a unique Z-scheme structure efficiently achieves the overall conversion of gas phase CO2 with H2O (CO2 (g) + 2H2O (g) = CH4 + 2O2) without any sacrificial reagents under visible light (λ ≥ 420 nm) irradiation. The CH4 and O2 evolution are 323 and 621 μL·g-1·h-1, and stable throughout 5 cycle reactions of total 40 h. This work demonstrates a breakthrough in artificial photosynthesis with the Z-scheme 1D heterojunction constructed by combining 2D semiconductor and 3D semiconductor based on the transfer balance of photogenerated electron and hole.

Smart grid technologies

Abstract: The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.

Carrier mobility model for GaN

Abstract: Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T ⩽1000 K) and concentration (10 14 ⩽ N ⩽10 19 cm −3 ) ranges. The dependence of the temperature T m at which the mobility μ is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Abstract: This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 °C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 °C. The experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.