Tim D. Veal

TL;DR: An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN, which produces charged donor-type surface states with associated downward band bending.

TL;DR: In this paper, the bulk and surface electronic structure of cubic bixbyite and rhombohedral polymorphs was investigated from x-ray photoemission spectroscopy measurements and density functional theory calculations.

TL;DR: Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

TL;DR: From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie approximately 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n- type doping in In 2O3.

TL;DR: In this paper, single crystals of phase pure SnS2 were synthesized and analyzed with modern spectroscopic techniques to ascertain the values of relevant semiconductor properties, including electron affinity of 4.16 eV and ionisation potential of 6.44 eV.