Timothy J. Leedham

Bio: Timothy J. Leedham is an academic researcher from Suffolk University. The author has contributed to research in topics: Thin film & Metalorganic vapour phase epitaxy. The author has an hindex of 20, co-authored 46 publications receiving 1855 citations. Previous affiliations of Timothy J. Leedham include University of Liverpool.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

Abstract: A low-temperature, solution-based preparation of amorphous, metal oxide semiconducting thin-films is reported. This ‘sol–gel on chip’ hydrolysis approach yields thin-film transistors with high field-effect mobilities, reproducible and stable turn-on voltages and high operational stability.

Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films

Abstract: Thin films of ZrO 2 and HfO 2 have been deposited by liquid injection metal-organic (MO)CVD using a range of new alkoxide precursors, [Zr(O t Bu) 2 (mmp) 2 ] (1), [Hf(O t Bu) 2 (mmp) 2 ] (2), [Zr(mmp) 4 ] (3), and [Hf(mmp) 4 ] (4): (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe 2 CH 2 OMe). The complexes are mononuclear and volatile, and are significantly less reactive to air and moisture than existing Zr and Hf alkoxide precursors such as [Zr(O t Bu) 4 ] and [Hf(O t Bu) 4 ]. The ZrO 2 and HfO 2 films were grown over a wide range of substrate temperatures (350-650 °C), and analysis by laser Raman spectroscopy shows that the films were deposited in the thermodynamically stable α- or monoclinic phase.

Synthesis and characterisation of two novel titanium isopropoxides stabilised with a chelating alkoxide: their use in the liquid injection MOCVD of titanium dioxide thin films

Abstract: The new precursors [Ti(OPri)3(OCH2CH2NMe2)] 1 and [Ti(OPri)2(OCH2CH2NMe2)2] 2 have been prepared and characterised. Compound 1 exists in solution at room temperature as a mixture of monomer and dimer(s), however at elevated temperatures the monomer predominates. Compound 2 exists in solution predominantly as a monomeric complex presumably with pseudo-octahedral coordination at the metal centre. Thin films of TiO2 have been deposited at 300-450C by liquid injection MOCVD using both 1 and 2. Analysis of the films by Auger electron spectroscopy failed to detect nitrogen although trace carbon was detected at levels of between 2.9 and 7.7. The potential utility of these modified compounds as precursors to TiO2 is discussed.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Abstract: Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Abstract: Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring

Abstract: Skin is the largest organ of the human body, and it offers a diagnostic interface rich with vital biological signals from the inner organs, blood vessels, muscles, and dermis/epidermis. Soft, flexible, and stretchable electronic devices provide a novel platform to interface with soft tissues for robotic feedback and control, regenerative medicine, and continuous health monitoring. Here, we introduce the term “lab-on-skin” to describe a set of electronic devices that have physical properties, such as thickness, thermal mass, elastic modulus, and water-vapor permeability, which resemble those of the skin. These devices can conformally laminate on the epidermis to mitigate motion artifacts and mismatches in mechanical properties created by conventional, rigid electronics while simultaneously providing accurate, non-invasive, long-term, and continuous health monitoring. Recent progress in the design and fabrication of soft sensors with more advanced capabilities and enhanced reliability suggest an impending t...