Tining Su

Bio: Tining Su is an academic researcher from Colorado School of Mines. The author has contributed to research in topics: Crystallite & Crystallization. The author has an hindex of 1, co-authored 1 publications receiving 23 citations.

Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon

Abstract: Utilizing the concepts of a critical crystallite size and local film inhomogeneity, it is shown that nucleation in thermally annealed hydrogenated amorphous silicon occurs in the more well ordered spatial regions in the network, which are defined by the initial inhomogeneous H distributions in the as-grown films. Although the film H evolves very early during annealing, the local film order is largely retained in the still amorphous films even after the vast majority of the H is evolved, and the more well ordered regions which are the nucleation center sites for crystallization are those spatial regions which do not initially contain clustered H, as probed by H NMR spectroscopy. The sizes of these better ordered regions relative to a critical crystallite size determine the film incubation times (the time before the onset of crystallization). Changes in film short range order upon H evolution, and the presence of microvoid type structures in the as grown films play no role in the crystallization process. While the creation of dangling bonds upon H evolution may play a role in the actual phase transformation itself, the film defect densities measured just prior to the onset of crystallization exhibit no trends which can be correlated with the film incubation times.

On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon

Abstract: In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiHx bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells.

Characterization and control of crystal nucleation in amorphous electron beam evaporated silicon for thin film solar cells

Abstract: The kinetics of crystal nucleation in high-rate electron beam evaporated amorphous Si for polycrystalline thin film solar cells was systematically studied on SiN and selected ZnO:Al-coated glass substrates with dissimilar surface topographies by employing Raman spectroscopy, transmission electron microscopy, and optical microscopy. The influence of the surface topography of the substrate and the disorder of the deposited amorphous Si could be correlated to the respective characteristics of the transient and steady state regime of the nucleation rate. The steady state nucleation rate Iss, its corresponding activation energy EIss, and consequently the size of the grains in the crystallized Si were found to be governed by the interplay between the surface roughness and the deposition temperature. The steady state nucleation rate Iss increased gradually upon increasing the substrate roughness, while lowering the deposition temperature of the amorphous Si on rough textures resulted in a decline of Iss. The tim...

Finite-thickness effect on crystallization kinetics in thin films and its adaptation in the Johnson-Mehl-Avrami-Kolmogorov model

Abstract: The Johnson–Mehl–Avrami–Kolmogorov (JMAK) model is widely used to quantify the isothermal crystallization kinetics. The present work reports an analytical solution for the crystallization kinetics in the special case of plate-shaped samples with a finite thickness. As a result, we obtained an adapted JMAK model revealing the thickness range which influences the crystallization kinetics mode significantly. The analytical solution also provides theoretical bounds for the film thickness, where the assumption of 2D or 3D kinetics is accurate. Finally, the conclusions related to amorphous silicon and amorphous nickel-titanium thin films are reported.

Solid-phase crystallization of ultra high growth rate amorphous silicon films

Abstract: In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (∼1.5 μm) polycrystalline silicon was obtained after SPC of high growth rate (∼25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.