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Togo Kudo

Bio: Togo Kudo is an academic researcher. The author has contributed to research in topics: Beamline & Undulator. The author has an hindex of 14, co-authored 43 publications receiving 2094 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the SPring-8 Angstrom Compact Free-Electron Laser (CFEL) was used for sub-angstrom fundamental-wavelength lasing at the Tokyo National Museum.
Abstract: Researchers report sub-angstrom fundamental-wavelength lasing at the SPring-8 Angstrom Compact Free-Electron Laser in Japan. The output has a maximum power of more than 10 GW, a pulse duration of 10−14 s and a lasing wavelength of 0.634 A.

1,467 citations

Journal ArticleDOI
TL;DR: The performance, calibration methods, and operation status of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) forX-ray Free-Electron laser experiments are presented.
Abstract: This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 1014 photon/mm2. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

218 citations

Journal ArticleDOI
TL;DR: In this article, a silicon-on-insulator (SOI) process for pixelated radiation detectors is developed based on a 0.2μm CMOS fully depleted (FD-)SOI technology.
Abstract: A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors. For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.

156 citations

Journal ArticleDOI
TL;DR: Owing to high dose tolerance and transparency of the diamond film, the monitor is suitable for routine diagnostics of extremely intense x-ray pulses from the FEL.
Abstract: We have developed an x-ray beam-position monitor for detecting the radiation properties of an x-ray free electron laser (FEL). It is composed of four PIN photodiodes that detect backscattered x-rays from a semitransparent diamond film placed in the beam path. The signal intensities from the photodiodes are used to compute the beam intensity and position. A proof-of-principle experiment at a synchrotron light source revealed that the error in the beam position is reduced to below 7 μm by using a nanocrystal diamond film prepared by plasma-enhanced chemical vapor deposition. Owing to high dose tolerance and transparency of the diamond film, the monitor is suitable for routine diagnostics of extremely intense x-ray pulses from the FEL.

90 citations

Journal ArticleDOI
TL;DR: In this article, a monolithic pixel detector with 0.2 μm silicon-on-insulator (SOI) technology has been developed, which has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip.
Abstract: A monolithic pixel detector with 0.2 μ m silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies.

46 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the SPring-8 Angstrom Compact Free-Electron Laser (CFEL) was used for sub-angstrom fundamental-wavelength lasing at the Tokyo National Museum.
Abstract: Researchers report sub-angstrom fundamental-wavelength lasing at the SPring-8 Angstrom Compact Free-Electron Laser in Japan. The output has a maximum power of more than 10 GW, a pulse duration of 10−14 s and a lasing wavelength of 0.634 A.

1,467 citations

Journal ArticleDOI
TL;DR: The goal is to describe the current state of the art in this area, identify challenges, and suggest future directions and areas where signal processing methods can have a large impact on optical imaging and on the world of imaging at large.
Abstract: i»?The problem of phase retrieval, i.e., the recovery of a function given the magnitude of its Fourier transform, arises in various fields of science and engineering, including electron microscopy, crystallography, astronomy, and optical imaging. Exploring phase retrieval in optical settings, specifically when the light originates from a laser, is natural since optical detection devices [e.g., charge-coupled device (CCD) cameras, photosensitive films, and the human eye] cannot measure the phase of a light wave. This is because, generally, optical measurement devices that rely on converting photons to electrons (current) do not allow for direct recording of the phase: the electromagnetic field oscillates at rates of ~1015 Hz, which no electronic measurement device can follow. Indeed, optical measurement/detection systems measure the photon flux, which is proportional to the magnitude squared of the field, not the phase. Consequently, measuring the phase of optical waves (electromagnetic fields oscillating at 1015 Hz and higher) involves additional complexity, typically by requiring interference with another known field, in the process of holography.

869 citations

Journal ArticleDOI
TL;DR: In this paper, the FERMI free-electron laser operating in the high-gain harmonic generation regime was demonstrated, allowing high stability, transverse and longitudinal coherence and polarization control.
Abstract: Researchers demonstrate the FERMI free-electron laser operating in the high-gain harmonic generation regime, allowing high stability, transverse and longitudinal coherence and polarization control.

831 citations

Book
30 Apr 2020
TL;DR: In this paper, the fundamental properties of soft x-rays and extreme ultraviolet (EUV) radiation are discussed and their applications in a wide variety of fields, including EUV lithography for semiconductor chip manufacture and soft X-ray biomicroscopy.
Abstract: This self-contained, comprehensive book describes the fundamental properties of soft x-rays and extreme ultraviolet (EUV) radiation and discusses their applications in a wide variety of fields, including EUV lithography for semiconductor chip manufacture and soft x-ray biomicroscopy. The author begins by presenting the relevant basic principles such as radiation and scattering, wave propagation, diffraction, and coherence. He then goes on to examine a broad range of phenomena and applications. The topics covered include EUV lithography, biomicroscopy, spectromicroscopy, EUV astronomy, synchrotron radiation, and soft x-ray lasers. He also provides a great deal of useful reference material such as electron binding energies, characteristic emission lines and photo-absorption cross-sections. The book will be of great interest to graduate students and researchers in engineering, physics, chemistry, and the life sciences. It will also appeal to practicing engineers involved in semiconductor fabrication and materials science.

786 citations

Journal ArticleDOI
TL;DR: A new X-ray diffraction data-analysis package is presented with a description of the algorithms and examples of its application to biological and chemical crystallography.
Abstract: The DIALS project is a collaboration between Diamond Light Source, Lawrence Berkeley National Laboratory and CCP4 to develop a new software suite for the analysis of crystallographic X-ray diffraction data, initially encompassing spot finding, indexing, refinement and integration. The design, core algorithms and structure of the software are introduced, alongside results from the analysis of data from biological and chemical crystallography experiments.

733 citations