T
Tohru Oka
Publications - 12
Citations - 678
Tohru Oka is an academic researcher. The author has contributed to research in topics: Diode & Field-effect transistor. The author has an hindex of 6, co-authored 8 publications receiving 556 citations.
Papers
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Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.
Journal ArticleDOI
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
TL;DR: In this paper, the authors reported the characteristics of vertical GaN-based trench metal-oxide-semiconductor field effect transistors on a free-standing GaN substrate with a blocking voltage of 16 kV.
Journal ArticleDOI
50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V
TL;DR: In this paper, a vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottkey electrode was reported.
Journal ArticleDOI
High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
TL;DR: In this paper, a high activation ratio of Mg ion implantation by conventional rapid thermal annealing (RTA) was demonstrated and the dependence of hole concentration on Mg dose was investigated.
Proceedings ArticleDOI
Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate
TL;DR: In this article, the authors demonstrate a 1.2 kV-class vertical GaN trench MOSFET with high current and switching operations, achieving a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa.