Tomoji Kawai

TL;DR: In this paper, a bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TFT) have been constructed using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3.

TL;DR: It is shown that the length of dsRNA is important for differential recognition by RIG-I and MDA5, and the Mda5 ligand, polyinosinic-polycytidylic acid, was converted to a Rig-I ligand after shortening of the ds RNA length.

TL;DR: In this paper, the authors showed that the irradiation of the carbohydrates, not only sugar or starch but also cellulose, in the presence of water and a RuO2/TiO 2/Pt photocatalyst powder leads to the efficient production of hydrogen gas.

TL;DR: In this paper, the p-type behavior in ZnO thin films, which are prepared by codoping method using Ga (donor) and N (acceptor) as the dopants, was realized.

TL;DR: The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping, and the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly (dG)-poly (dC) behavesAs a p-type silicon semiconductor.