Toshifumi Watanabe

Bio: Toshifumi Watanabe is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Silicon photonics & Waveguide (optics). The author has an hindex of 30, co-authored 111 publications receiving 5257 citations.

Microphotonics devices based on silicon microfabrication technology

Abstract: This work presents our recent progress in the development of an Si wire waveguiding system for microphotonics devices. The Si wire waveguide promises size reduction and high-density integration of optical circuits due to its strong light confinement. However, large connection and propagation losses had been serious problems. We solved these problems by using a spot-size converter and improving the microfabrication technology. As a result, propagation losses as low as 2.8 dB/cm for a 400/spl times/200 nm waveguide and a coupling loss of 0.5 dB per connection were obtained. As we have the technologies for the fabrication of complex, practical optical devices using Si wire waveguides, we used them to make microphotonics devices, such as a ring resonator and lattice filter. The devices we made exhibit excellent characteristics because of the microfabrication with the precision of a few nanometers. We have also demonstrated that Si wire waveguides have great potential for use in nonlinear optical devices.

Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect

Abstract: We propose an ultrahigh quality factor (Q) photonic crystal slab nanocavity created by the local width modulation of a line defect. We show numerically that this nanocavity has an intrinsic Q value of up to 7×107. Transmission measurements for fabricated Si photonic-crystal-slab nanocavities directly coupled to input/output waveguides have exhibited a loaded Q value of ∼800000. These theoretical and experimental Q values are very high for photonic crystal nanocavities. In addition, we demonstrate that simply shifting two holes away from a line defect is sufficient to achieve an ultrahigh Q value both theoretically and experimentally.

Low loss mode size converter from 0.3 [micro sign]m square Si wire waveguides to singlemode fibres

Abstract: A novel integrated mode size converter for single-mode Si wire waveguides is presented. The mode size converter is constructed with two-dimensional tapered Si waveguides and overlaid high-index polymer waveguides. We calculated the proposed mode size converter characteristics, and fabricated 1.09 mm length Si wire waveguides with the converters. The measured loss of the mode size converter was 0.8 dB per conversion, and the total insertion loss through the sample with an Si wire waveguide was 3.5 dB.

Four-wave mixing in silicon wire waveguides.

Abstract: We report the observation of four-wave mixing phenomenon in a simple silicon wire waveguide at the optical powers normally employed in communications systems. The maximum conversion efficiency is about -35 dB in the case of a 1.58-cm-long silicon wire waveguide. The nonlinear refractive index coefficient is found to be 9×10-18 m2/W. This value is not negligible for dense wavelength division multiplexing components, because it predicts the possibility of large crosstalk. On the other hand, with longer waveguide lengths with smaller propagation loss, it would be possible to utilize just a simple silicon wire for practical wavelength conversion. We demonstrate the wavelength conversion for data rate of 10-Gbps using a 5.8-cm-long silicon wire. These characteristics are attributed to the extremely small core of silicon wire waveguides.

Silicon photonic circuit with polarization diversity

Abstract: We devised a silicon photonic circuit with polarization diversity that consists of polarization splitters and polarization rotators. The splitter is based on a simple directional coupler and the rotator has an off-axis double-core structure. Both devices can be made by using planar fabrication technology and require no complex proceses for the fabrication of three-dimensional structures. We fabricated a polarization-independent wavelength filter based on Si wire waveguides as an application of the polarization diversity. The filter consists of the polarization splitters, the rotators, and a ring resonator. The polarization-dependent loss of the filter is about 1 dB. A 10-Gbps data transmission with scrambled polarization is demonstrated.

Silicon microring resonators

Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

Slow light in photonic crystals

Abstract: Slow light with a remarkably low group velocity is a promising solution for buffering and time-domain processing of optical signals. It also offers the possibility for spatial compression of optical energy and the enhancement of linear and nonlinear optical effects. Photonic-crystal devices are especially attractive for generating slow light, as they are compatible with on-chip integration and room-temperature operation, and can offer wide-bandwidth and dispersion-free propagation. Here the background theory, recent experimental demonstrations and progress towards tunable slow-light structures based on photonic-band engineering are reviewed. Practical issues related to real devices and their applications are also discussed. The unique properties of wide-bandwidth and dispersion-free propagation in photonic-crystal devices have made them a good candidate for slow-light generation. This article gives the background theory of slow light, as well as an overview of recent experimental demonstrations based on photonic-band engineering.

The Past, Present, and Future of Silicon Photonics

Abstract: The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. RD however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mum, with cryocooling needed in some cases

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Silicon photonics

Abstract: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications