T
Toshiki Makimoto
Researcher at Nippon Telegraph and Telephone
Publications - 233
Citations - 6965
Toshiki Makimoto is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 40, co-authored 231 publications receiving 6433 citations. Previous affiliations of Toshiki Makimoto include University of Electro-Communications & Waseda University.
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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
TL;DR: An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
TL;DR: It is demonstrated that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium Nitride (GaN)-based device structures onto foreign substrates.
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Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
Kenji Ueda,Makoto Kasu,Yoshiharu Yamauchi,Toshiki Makimoto,M. Schwitters,D. J. Twitchen,G. A. Scarsbrook,S.E. Coe +7 more
TL;DR: In this article, field effect transistors (FETs) with gate lengths of 0.1 /spl mu/m were fabricated using polycrystalline chemical-vapor-deposited diamond films with large grains.
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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Kazuhide Kumakura,Kazuhide Kumakura,Kazuhide Kumakura,Toshiki Makimoto,Toshiki Makimoto,Toshiki Makimoto,Naoki Kobayashi,Naoki Kobayashi,Tamotsu Hashizume,Takashi Fukui,Hideki Hasegawa +10 more
TL;DR: In this article, the minority electron diffusion length in p-GaN was investigated by performing electron-beam-induced current measurements of GaN p-n junction diodes.
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Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
TL;DR: Atomic layer doping of p-type carbon impurity in GaAs was demonstrated using flow-rate modulation epitaxy as mentioned in this paper, where an extremely narrow capacitance-voltage profile with 58 nm full width at half-maximum is observed in the wafer with a sheet hole density of 95×1011 cm−2.