An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Solution-deposited metal oxides show great potential for large-area electronics, but they generally require high annealing temperatures, which are incompatible with flexible polymeric substrates. Combustion processing is now reported as a new low-temperature route for the deposition of diverse metal oxide films, and high-performance transistors are demonstrated using this method.

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

Structural changes in sol-gel films with photo-irradiation were investigated using zinc oxide (ZnO) derived from zinc acetate. The exposure of the films to an ultraviolet lamp induced hexagonal ZnO crystals in a relatively dense amorphous structure. On the other hand, the formation of zinc metal was found in a porous gel film. The photo-induced crystallization and reduction are ascribed to the electronic excitation in the metastable non-crystalline states.

Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp

PROBLEM TO BE SOLVED: To provide a secondary battery has little variation of a particle diameter and a particle size distribution between manufacturing lots, iron phosphate lithium having characteristic of being especially used suitably as a part of positive pole material of a secondary battery, a manufacturing method that can compounds this with sufficient reproducibility, high capacity, and a stable secondary-battery characteristic are shown. SOLUTION: The iron phosphate lithium has a particle size distribution, which measured with laser diffraction/dispersion method is a normal distribution mathematically, a median of the above particle size distribution of 5.3 μm or less, and the particle diameter from the minimum particle diameter to 10%, of 2.2 μm or less. COPYRIGHT: (C)2002,JPO

Iron phosphate lithium, its manufacturing method, and secondary battery using it

Photoinduced hydroxylation at ZnO surface

The resistivity of sol-gel-derived indium tin oxide (ITO) films effectively decreased with crystallization by exposure to a low fluence UV beam (10–20 mJ/cm2) from an ArF laser. The increase in temperature at the surface of the films was below 10°C under the irradiation condition. Thus, conductive and transparent ITO coatings were successfully obtained on polyethylene terephthalate and polyimide sheets using a sol-gel route assisted with an ultraviolet laser beam.

Low-Temperature Synthesis of ITO Thin Films Using an Ultraviolet Laser for Conductive Coating on Organic Polymer Substrates

The present invention provides an organic/inorganic composite containing a rare earth metal or/and Period IV transition metal in which the aforementioned rare earth metal or/and Period IV transition metal is doped at a high concentration, and control of quenching and optical transparency are assured thereby; and an optical amplifier, a light control optical element, and luminescent device utilizing the same. The organic/inorganic composite containing a rare earth metal or/and Period IV transition metal is one in which at least one species of rare earth metal or/and Period IV transition metal is dispersed in an organic polymer, with the aforementioned composite containing an optically transparent organic polymer and an inorganic dispersion phase comprising: (1) a rare earth metal and (2) another element coordinated thereto via an oxygen atom(s). The inorganic dispersion phase in which another metal coordinates to rare earth metal or/and Period IV transition metal via an oxygen atom(s) preferably has an average particle size ranging from 0.1 to 1000 nm. Preferably, the ratio of rare earth metal or/and Period IV transition metal when mathematically converted to solid content is 90 mass % or less of the total mass of the organic polymer and the rare earth metal dispersion phase.

Toshimi Fukui

Papers

Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp

Iron phosphate lithium, its manufacturing method, and secondary battery using it

Photoinduced hydroxylation at ZnO surface

Low-Temperature Synthesis of ITO Thin Films Using an Ultraviolet Laser for Conductive Coating on Organic Polymer Substrates

Organic/Inorganic Composite