Travis C. Wade

Bio: Travis C. Wade is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Diamond & Field electron emission. The author has an hindex of 5, co-authored 9 publications receiving 89 citations. Previous affiliations of Travis C. Wade include Vanderbilt University.

Thermionic emission characterization of boron‐doped microcrystalline diamond films at elevated temperatures

Abstract: A boron-doped polycrystalline diamond film was deposited on a molybdenum substrate and resistively heated in a high vacuum environment. The thermally excited emission current as a function of cathode temperature was measured. This phenomenon, known as thermionic emission, is characterized by electron emission arising from a surface at elevated temperatures and is described by the Richardson equation. The observed thermionic emission current from the diamond sample followed the Richardson equation from which a work function of 4.43 eV and a Richardson constant of ∼60 A/cm2K2 were observed. This indicates boron-doped polycrystalline diamond behaves as an interesting thermionic emitter for possible energy conversion and other electron emission applications.

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Abstract: Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with In2O3 and Al2O3 will be discussed.

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride.

Abstract: Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.