Author
U. Biggeri
Bio: U. Biggeri is an academic researcher from University of Florence. The author has contributed to research in topics: Silicon & Irradiation. The author has an hindex of 9, co-authored 39 publications receiving 710 citations.
Topics: Silicon, Irradiation, Hall effect, Radiation damage, Acceptor
Papers
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Université de Montréal20, National Academy of Sciences of Ukraine21, Tel Aviv University22, Kurchatov Institute23, Academy of Sciences of the Czech Republic24, SINTEF25, Royal Institute of Technology26, Micron Technology27, Charles University in Prague28, Technical University of Dortmund29
01 Jul 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
402 citations
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Charles University in Prague20, National Academy of Sciences of Ukraine21, Université de Montréal22, Tel Aviv University23, Kurchatov Institute24, Academy of Sciences of the Czech Republic25, SINTEF26, Royal Institute of Technology27, Micron Technology28, Technical University of Dortmund29
01 Jun 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
108 citations
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University of Turin1, CERN2, University of Catania3, University of Perugia4, University of Padua5, University of Bari6, University of Pisa7, University of Florence8, Purdue University9, ETH Zurich10, Helsinki Institute of Physics11, Rutherford Appleton Laboratory12, RWTH Aachen University13, Imperial College London14, Humboldt University of Berlin15, University of Oulu16, Brunel University London17
01 Jun 2000-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0 0〉 substrate as discussed by the authors.
Abstract: Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4×10 14 protons / cm 2 of 24 GeV /c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p+ implant has been studied and found to enhance the stability.
26 citations
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01 Aug 1994TL;DR: In this paper, a thermally stimulated current (TSC) spectrometer was used to measure deep level spectra for high resistivity silicon detectors irradiated by high fluence fast neutrons.
Abstract: Measurements of deep level spectra for high resistivity silicon detectors irradiated by high fluence fast neutrons (up to 10/sup 14/ n/cm/sup 2/) have been performed using a thermally stimulated current (TSC) spectrometer. Nine new defect levels with peaking temperatures of respectively 26 K, 34 K, 41 K, 47 K, 90 K, 110 K, 135 K, 147 K and 155 K begin to appear for fluences over 10/sup 13/ n/cm/sup 2/. All peaks are strongly dependent on the filling forward voltage V/sub fill/, or injection current, especially for high fluences. Energy levels inside the band gap and trap concentrations corresponding to each of the TSC peaks totaling at most 18, have been studied systematically and possible relations to lattice defects have been discussed. >
21 citations
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21 Apr 1999-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, two sets of p-type silicon (high resistivity bulk and low resistivity epitaxial) samples and one set of n + -p junctions have been irradiated with fast neutrons up to 8×10 13 ǫ cm −2.
Abstract: Two sets of p-type silicon (high resistivity bulk and low resistivity epitaxial) samples and one set of n + –p junctions have been irradiated with fast neutrons up to 8×10 13 cm −2 . I – V and C – V characteristics as well as Thermally Stimulated Currents (TSC) and Hall Effect (HE) analyses have been performed on the irradiated samples and diodes in view to determine the radiation-induced damage and the change in the electrical properties. A change in the effective carrier concentration and in the leakage current after irradiation similar to the one found for p + –n detectors has been observed in p-type diodes. An increase with the fluence of the resistivity and Hall coefficient was measured at room temperature both for the low and high resistivity sets. This evidence has been explained in terms of a two-level model taking into account a linear increase in concentration with the fluence of the main radiation-induced defects observed with TSC, probably related to divacancy and carbon–oxygen complex.
15 citations
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TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.
5,193 citations
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TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.
709 citations
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TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
607 citations
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21 Apr 1999-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given in this article, where possible ways are outlined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.
Abstract: An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.
260 citations
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11 Oct 2003-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects, both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered.
Abstract: Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.
204 citations