U
U.-In Chung
Researcher at Samsung
Publications - 2
Citations - 988
U.-In Chung is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Electron mobility. The author has an hindex of 2, co-authored 2 publications receiving 985 citations.
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Proceedings ArticleDOI
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
Jae Chul Park,Sang-Wook Kim,Sunil Kim,Huaxiang Yin,Ji-Hyun Hur,Sanghun Jeon,Sungho Park,I Hun Song,Youngsoo Park,U.-In Chung,Myung Kwan Ryu,Sangwon Lee,Sungchul Kim,Yongwoo Jeon,Dong Myong Kim,Dae Hwan Kim,Kee-Won Kwon,Chang Jung Kim +17 more
TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.
Journal ArticleDOI
Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
David H. Seo,Sanghun Jeon,Sunae Seo,I-hun Song,Chang-Jung Kim,Sung-Ho Park,James S. Harris,U.-In Chung +7 more
TL;DR: In this article, a transparent InGaZnO thin film transistor using a graphene composite as the transparent source/drain electrode is presented, which shows a sheet resistance reduction of 15% while losing only 1.2% transparency when compared to the reference indium-tin oxide only electrode.