Uddalak Bhattacharya

Bio: Uddalak Bhattacharya is an academic researcher from Intel. The author has contributed to research in topics: Static random-access memory & CMOS. The author has an hindex of 26, co-authored 70 publications receiving 3235 citations. Previous affiliations of Uddalak Bhattacharya include University of California, Santa Barbara.

A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply

Abstract: Column-based dynamic power supply has been integrated into a high-frequency 70-Mb SRAM design that is fabricated on a high-performance 65-nm CMOS technology. The fully synchronized design achieves a 3-GHz operating frequency at 1.1-V power supply. The power supply at SRAM cell array is dynamically switched between two different voltage levels during READ and WRITE operations. Silicon measurement has proven this method to be effective in achieving both good cell READ and WRITE margins, while lowering the overall SRAM leakage power consumption.

A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications

Abstract: A leading edge 22nm 3-D tri-gate transistor technology has been optimized for low power SoC products for the first time. Low standby power and high voltage transistors exploiting the superior short channel control, < 65mV/dec subthreshold slope and <40mV DIBL, of the Tri-Gate architecture have been fabricated concurrently with high speed logic transistors in a single SoC chip to achieve industry leading drive currents at record low leakage levels. NMOS/PMOS Idsat=0.41/0.37mA/um at 30pA/um Ioff, 0.75V, were used to build a low standby power 380Mb SRAM capable of operating at 2.6GHz with 10pA/cell standby leakages. This technology offers mix-and-match flexibility of transistor types, high-density interconnect stacks, and RF/mixed-signal features for leadership in mobile, handheld, wireless and embedded SoC products.

Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

Abstract: We describe active and nonlinear wave propagation devices for generation and detection of (sub)millimeter wave and (sub)picosecond signals. Shock-wave nonlinear transmission lines (NLTL's) generate /spl sim/4-V step functions with less than 0.7-ps fall times. NLTL-gated sampling circuits for signal measurement have attained over 700-GHz bandwidth. Soliton propagation on NLTL's is used for picosecond impulse generation and broadband millimeter-wave frequency multiplication. Picosecond pulses can also be generated on traveling-wave structures loaded by resonant tunneling diodes. Applications include integration of photodetectors with sampling circuits for picosecond optical waveform measurements and instrumentation for millimeter-wave waveform and network (circuit) measurements both on-wafer and in free space. General properties of linear and nonlinear distributed devices and circuits are reviewed, including gain-bandwidth limits, dispersive and nondispersive propagation, shock-wave formation, and soliton propagation. >

Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices.

Abstract: We report the first observation of absolute negative conductance and multiphoton stimulated emission in sequential resonant tunneling semiconductor superlattices driven by intense terahertz electric fields. With increasing terahertz field strength the conductance near zero dc bias decreases towards zero and then becomes negative. This is accompanied by new steps and plateaus that are attributed to multiphoton-assisted resonant tunneling between ground states of neighboring quantum wells accompanied by the stimulated emission of a photon.

SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction

Abstract: A 70-Mb SRAM is designed and fabricated on a 65-nm CMOS technology. It features a 0.57-/spl mu/m/sup 2/ 6T SRAM cell with large noise margin down to 0.7 V for low-voltage operation. The fully synchronized subarray contains an integrated leakage reduction scheme with dynamically controlled sleep transistor. SRAM virtual ground in standby is controlled by programmable bias transistors to achieve good voltage control with fine granularity under process skew. It also has a built-in programmable defect "screen" circuit for high volume manufacturing. The measurements showed that the SRAM leakage can be reduced by 3-5/spl times/ while maintaining the integrity of stored data.

Electronics based on two-dimensional materials

Abstract: The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Artificial Brownian motors: Controlling transport on the nanoscale

Abstract: In systems possessing spatial or dynamical symmetry breaking, Brownian motion combined with unbiased external input signals, deterministic and random alike, can assist directed motion of particles at submicron scales. In such cases, one speaks of ``Brownian motors.'' In this review the constructive role of Brownian motion is exemplified for various physical and technological setups, which are inspired by the cellular molecular machinery: the working principles and characteristics of stylized devices are discussed to show how fluctuations, either thermal or extrinsic, can be used to control diffusive particle transport. Recent experimental demonstrations of this concept are surveyed with particular attention to transport in artificial, i.e., nonbiological, nanopores, lithographic tracks, and optical traps, where single-particle currents were first measured. Much emphasis is given to two- and three-dimensional devices containing many interacting particles of one or more species; for this class of artificial motors, noise rectification results also from the interplay of particle Brownian motion and geometric constraints. Recently, selective control and optimization of the transport of interacting colloidal particles and magnetic vortices have been successfully achieved, thus leading to the new generation of microfluidic and superconducting devices presented here. The field has recently been enriched with impressive experimental achievements in building artificial Brownian motor devices that even operate within the quantum domain by harvesting quantum Brownian motion. Sundry akin topics include activities aimed at noise-assisted shuttling other degrees of freedom such as charge, spin, or even heat and the assembly of chemical synthetic molecular motors. This review ends with a perspective for future pathways and potential new applications.