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Utsav D. Dave

Other affiliations: Ghent University
Bio: Utsav D. Dave is an academic researcher from Columbia University. The author has contributed to research in topics: Silicon photonics & Supercontinuum. The author has an hindex of 13, co-authored 40 publications receiving 1093 citations. Previous affiliations of Utsav D. Dave include Ghent University.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the advantages and challenges associated with these two material platforms are discussed, and the case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented.
Abstract: The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-on-insulator has some drawbacks for these emerging applications, e.g., silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

234 citations

Journal ArticleDOI
20 Jan 2020
TL;DR: In this paper, a multi-pass photonic platform is integrated into a large-scale phased array that reduces phase shifter power consumption by nearly 9 times, without sacrificing speed or optical bandwidth.
Abstract: Optical phased arrays are a promising beam-steering technology for ultra-small solid-state lidar and free-space communication systems. Long-range, high-performance arrays require a large beam emission area densely packed with thousands of actively phase-controlled, power-hungry light emitting elements. To date, such large-scale phased arrays have been impossible to realize since current demonstrated technologies would operate at untenable electrical power levels. Here we show a multi-pass photonic platform integrated into a large-scale phased array that lowers phase shifter power consumption by nearly 9 times. The multi-pass structure decreases the power consumption of a thermo-optic phase shifter to a ${{\rm P}_\pi }$Pπ of ${1.7}\;{\rm mW/}\pi $1.7mW/π without sacrificing speed or optical bandwidth. Using this platform, we demonstrate a silicon photonic phased array containing 512 actively controlled elements, consuming only 1.9 W of power while performing 2D beam steering over a ${70}^\circ \times {6}^\circ $70∘×6∘ field of view. Our results demonstrate a path forward to building scalable phased arrays containing thousands of active elements.

202 citations

Journal ArticleDOI
TL;DR: In this paper, the development of silicon and silicon nitride (Si3N4) integrated photonic integrated circuits for various spectroscopic sensing applications is presented, including waveguide-based absorption and Raman and surface enhanced Raman spectroscopy.
Abstract: There is a rapidly growing demand to use silicon and silicon nitride (Si3N4) integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology, complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si3N4-based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip.

192 citations

Journal ArticleDOI
TL;DR: In this paper, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots.
Abstract: Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3 mu m) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

165 citations

Journal ArticleDOI
TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.
Abstract: In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

131 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Abstract: Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

1,027 citations

Journal ArticleDOI
TL;DR: In this paper, the authors summarize the developments, applications and underlying physics of optical frequency comb generation in photonic-chip waveguides via supercontinuum generation and in microresonators via Kerr-comb generation that enable comb technology from the near-ultraviolet to the mid-infrared regime.
Abstract: Recent developments in chip-based nonlinear photonics offer the tantalizing prospect of realizing many applications that can use optical frequency comb devices that have form factors smaller than 1 cm3 and that require less than 1 W of power. A key feature that enables such technology is the tight confinement of light due to the high refractive index contrast between the core and the cladding. This simultaneously produces high optical nonlinearities and allows for dispersion engineering to realize and phase match parametric nonlinear processes with laser-pointer powers across large spectral bandwidths. In this Review, we summarize the developments, applications and underlying physics of optical frequency comb generation in photonic-chip waveguides via supercontinuum generation and in microresonators via Kerr-comb generation that enable comb technology from the near-ultraviolet to the mid-infrared regime. This Review discusses the developments and applications of on-chip optical frequency comb generation based on two concepts—supercontinuum generation in photonic-chip waveguides and Kerr-comb generation in microresonators.

650 citations

Journal ArticleDOI
08 Oct 2020-Nature
TL;DR: Generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication.
Abstract: The growing maturity of integrated photonic technology makes it possible to build increasingly large and complex photonic circuits on the surface of a chip. Today, most of these circuits are designed for a specific application, but the increase in complexity has introduced a generation of photonic circuits that can be programmed using software for a wide variety of functions through a mesh of on-chip waveguides, tunable beam couplers and optical phase shifters. Here we discuss the state of this emerging technology, including recent developments in photonic building blocks and circuit architectures, as well as electronic control and programming strategies. We cover possible applications in linear matrix operations, quantum information processing and microwave photonics, and examine how these generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication. The current state of programmable photonic integrated circuits is discussed, including recent developments in their building blocks, circuit architectures, electronic control and programming strategies, as well as different application spaces.

521 citations

Journal ArticleDOI
TL;DR: The Review summarizes the progress of hybrid quantum photonics integration in terms of its important design considerations and fabrication approaches, and highlights some successful realizations of key physical resources for building integrated quantum devices, such as quantum teleporters, quantum repeaters and quantum simulators.
Abstract: Recent developments in chip-based photonic quantum circuits have radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our Review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations, including optical connectivity and operation conditions, and highlights several successful realizations of key physical resources for building a quantum teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid-state platform, which hold great potential for quantum information applications. The Review summarizes the progress of hybrid quantum photonics integration in terms of its important design considerations and fabrication approaches, and highlights some successful realizations of key physical resources for building integrated quantum devices, such as quantum teleporters, quantum repeaters and quantum simulators.

404 citations

01 Jan 2002
TL;DR: In this article, a review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime.
Abstract: A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

360 citations