U
Uwe Schröder
Researcher at Qimonda
Publications - 60
Citations - 6781
Uwe Schröder is an academic researcher from Qimonda. The author has contributed to research in topics: Dielectric & Ferroelectricity. The author has an hindex of 29, co-authored 60 publications receiving 4929 citations. Previous affiliations of Uwe Schröder include Infineon Technologies.
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Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
Journal ArticleDOI
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
Journal ArticleDOI
Ferroelectricity in yttrium-doped hafnium oxide
Johannes Müller,Uwe Schröder,T. S. Böscke,I. Müller,Ulrich Böttger,L. Wilde,Jonas Sundqvist,Martin Lemberger,P. Kücher,Thomas Mikolajick,Lothar Frey +10 more
TL;DR: In this article, structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented, based on X-ray diffraction.
Journal ArticleDOI
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Johannes Müller,T. S. Böscke,D. Bräuhaus,Uwe Schröder,Ulrich Böttger,Jonas Sundqvist,P. Kücher,Thomas Mikolajick,Lothar Frey +8 more
TL;DR: In this article, the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide thin films of 7.5 to 9.5 nm thickness was reported.
Proceedings ArticleDOI
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Johannes Müller,T. S. Boscke,Stefan Müller,Ekaterina Yurchuk,P. Polakowski,Jan Paul,Dominik Martin,Tony Schenk,K. Khullar,A. Kersch,Wenke Weinreich,S. Riedel,Konrad Seidel,Amit Kumar,Thomas M. Arruda,Sergei V. Kalinin,Till Schlösser,Roman Boschke,R. van Bentum,Uwe Schröder,Thomas Mikolajick +20 more
TL;DR: In this paper, the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment.