V
V. A. Kulbachinskii
Researcher at Moscow State University
Publications - 267
Citations - 2654
V. A. Kulbachinskii is an academic researcher from Moscow State University. The author has contributed to research in topics: Magnetoresistance & Hall effect. The author has an hindex of 22, co-authored 262 publications receiving 2402 citations. Previous affiliations of V. A. Kulbachinskii include National Research Nuclear University MEPhI & Moscow Institute of Physics and Technology.
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Resonant level formed by tin in Bi 2 Te 3 and the enhancement of room-temperature thermoelectric power
TL;DR: In this paper, it was shown that Sn provides an excess density of states (DOS) about 15 meV below the valence band edge and that it is the increases in DOS itself that enhances the thermoelectric power of this semiconductor even at room temperature.
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The time-dependent process of oxidation of the surface of Bi2Te3 studied by x-ray photoelectron spectroscopy
TL;DR: In this article, the process of oxidation of the Bi2Te3 surface was investigated by x-ray photoelectron spectroscopy (XPS), and the oxidized surface layer was found to have a definite thickness, with configurations where O is bonded with Bi and Te, and Bi and TE are bonded with three and four oxygens, respectively.
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Giant improvement of thermoelectric power factor of Bi2Te3 under pressure
Sergey V. Ovsyannikov,Vladimir V. Shchennikov,Grigoriy V. Vorontsov,Andrey Yu. Manakov,Anna Y. Likhacheva,V. A. Kulbachinskii +5 more
TL;DR: In this paper, the power factor of single crystals of Bi2Te3 and indium-doped bismuth telluride (InxBi2−xTe3,004≤x≤010) were reported on a pressure range of 0-85 GPa.
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Valence-band changes in Sb 2 − x In x Te 3 and Sb 2 Te 3 − y Se y by transport and Shubnikov–de Haas effect measurements
V. A. Kulbachinskii,Z. M. Dashevskii,M. Inoue,Misao Sasaki,Hiroshi Negishi,Wenxiu Gao,Petr Lostak,J. Horak,A. de Visser +8 more
TL;DR: The most probable band model for these solid solutions of semiconductors is proposed, showing a multirelaxation process with characteristic relaxation times for thermal diffusions of photoinduced conduction carriers, whose analyses give valuable information about carrier mobilities and effective masses.
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Ferromagnetism in new diluted magnetic semiconductor Bi2−xFexTe3
V. A. Kulbachinskii,A. Yu. Kaminskii,K. Kindo,Yasuo Narumi,Ken-ichi Suga,Petr Lostak,P. Svanda +6 more
TL;DR: In this article, single crystals of the new diluted magnetic semiconductors of p-Bi2−xFexTe3 (0⩽x墳008) and n-Bi 2−x-FexSe3 (1) have been produced and magnetization and magnetic susceptibility have been measured in the temperature interval 2-300 K.