V. Damodara Das

TL;DR: In this article, the Jain-Verma theory has been applied to the thermoelectric data of vacuum flash-evaporated and annealed polycrystalline thin films of (Bi 0.5Sb0.5)2Te3 alloys of different thicknesses to study the nature of principal carrier scattering mechanism and also to know the extent of other scattering mechanisms.

TL;DR: In this article, photoelectrochemical (PEC) solar cells made using as-grown polycrystalline thin films of n-CdSe0.6Te0.4 (thickness ≈ 5000 A) with a deposition rate of 20 ± 1 A s −1 in a vacuum better than 5 × 10−5 torr on indium oxide coated microslide glass plates [ σ = 1.25 × 10 4 (Ω- cm ) −1 ] held at 200°C) dipped in aqueous ferro-fer

TL;DR: In this paper, a two-layer model to explain the thickness dependence of conductivity and thermoelectric power of semiconducting thin films has been developed assuming that the film is a parallel combination of resistances of the three layers: the first is the interior ‘grain boundary' layer, and the other two, outer layers on opposite sides, whose conductivities are altered by the band bending.

TL;DR: The phase purity and compositional uniformity of polycrystalline bulk materials were investigated using powder X-ray diffraction (XRD) and proton induced Xray emission (PIXE) experiments as discussed by the authors.

TL;DR: In this paper, the reciprocal thickness dependence of electrical resistivity observed has been explained by the effective mean free path model of classical size effect, and a reduction in conduction activation energy with increase in film thickness is accounted for by the fact that the grain size increases with thickness, and hence the barrier height decreases.