V. Ferlet-Cavrois

TL;DR: In this paper, two primary types of radiation-induced charge are oxide-trapped charge and interface-trap charge, which can cause large radiationinduced threshold voltage shifts and increases in leakage currents.

TL;DR: In this paper, the authors review the total dose, single-event effects, and dose rate hardness of silicon-on-insulator (SOI) devices and use body ties to reduce bipolar amplification.

TL;DR: In this paper, the authors measured the statistical transient response of floating body SOI and bulk devices under proton and heavy ion irradiation, and calculated the threshold and critical transient width for unattenuated propagation for both bulk and floating-body SOI as a function of technology scaling.

TL;DR: In this article, the generation and propagation of single event transients (SET) in SOI inverter chains with different designs is measured and modeled in a single-input single-output (SISO) system.

TL;DR: In this article, the worst case bias during total dose irradiation of partially depleted SOI transistors from two technologies is correlated to the device architecture, and experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide.