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V. I. Talanin

Bio: V. I. Talanin is an academic researcher from Zaporizhzhia Institute of Economics and Information Technologies. The author has contributed to research in topics: Critical radius & Coalescence (physics). The author has an hindex of 2, co-authored 2 publications receiving 8 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals, and it has been shown that the model can provide necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.
Abstract: The diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals. It has been shown that, in the framework of the proposed kinetic model of defect formation, the formation and development of the defect structure during the growth of a crystal and its heat treatment can be considered within a unified context. The mathematical apparatus of the diffusion model can provide a basis for the development of a program package for the analysis and calculation of the formation of growth and postgrowth microdefects in dislocation-free silicon single crystals. It has been demonstrated that the diffusion model of the formation of growth and post-growth microdefects allows one to determine necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.

4 citations

Journal ArticleDOI
TL;DR: In this article, the adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered.
Abstract: The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high-temperature range and thus extend the theoretical basis of the application of the classical nucleation theory. According to the model of high-temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of precipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high-temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation-free single crystals of semiconductors and metals.

4 citations


Cited by
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Journal ArticleDOI
01 Jun 2020-Vacuum
TL;DR: In this article, the fabrication of Ni RTDs at low temperatures is investigated by direct-current (DC) magnetron sputtering, and the effects of sputter pressure and power on thin film microscopic morphology and structure are also investigated.

14 citations

Journal ArticleDOI
TL;DR: In this paper, a comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out.
Abstract: Theoretical studies of defect formation in semiconductor silicon play an important role in the creation of breakthrough ideas for next-generation technologies. A brief comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out. Foundations of the diffusion model of the formation of structural imperfections during the silicon growth have been presented. It has been shown that the diffusion model is based on high-temperature precipitation of impurities. The model of high-temperature precipitation of impurities describes processes of nucleation, growth, and coalescence of impurities during cooling of a crystal from 1683 to 300 K. It has been demonstrated that the diffusion model of defect formation provides a unified approach to the formation of a defect structure beginning with the crystal growth to the production of devices. The possibilities of using the diffusion model of defect formation for other semiconductor crystals and metals have been discussed. It has been shown that the diffusion model of defect formation is a platform for multifunctional solution of many key problems in modern solid state physics. Fundamentals of practical application of the diffusion model for engineering of defects in crystals with modern information technologies have been considered. An algorithm has been proposed for the calculation and analysis of a defect structure of crystals.

8 citations

Journal ArticleDOI
TL;DR: In this paper, the formation of silicon carbon and siliconoxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation.
Abstract: The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.

7 citations

Journal ArticleDOI
TL;DR: In this article, the adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered.
Abstract: The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high-temperature range and thus extend the theoretical basis of the application of the classical nucleation theory. According to the model of high-temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of precipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high-temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation-free single crystals of semiconductors and metals.

4 citations

Journal ArticleDOI
TL;DR: In this paper, a qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon, and it is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.
Abstract: It is shown that the Vlasov model for a solid describes the complexing processes when growing real crystals with allowance for the thermal growth conditions. It makes it possible (along with the classical theory of nucleation and growth of second-phase particles in solids) to calculate the defect crystal structure that was formed during the growth. It is established that the high-temperature impurity precipitation is directly related to the subsequent transformation of the defect structure when manufacturing of silicon devices. A qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon. It is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.

2 citations