V. Korkala

Bio: V. Korkala is an academic researcher from University of Oulu. The author has contributed to research in topics: Low-power electronics & Bandgap voltage reference. The author has an hindex of 1, co-authored 1 publications receiving 48 citations.

Design of a 1 V low power CMOS bandgap reference based on resistive subdivision

Abstract: The design of a CMOS bandgap reference (BGR), for portable applications with medium accuracy, is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 0.750 V with 1/spl sigma/ variation of 10 mV (1.3%) without trimming with a supply voltage range from 1 V to 1.6 V and temperature range of -20/spl deg/C-50/spl deg/C measured from 10 samples. The maximum supply current is 4.5 /spl mu/A and the area of the design is /spl sim/0.13 mm/sup 2/ with a standard 0.35 /spl mu/m double-poly n-well CMOS process.

Efficient Power Management Circuit: From Thermal Energy Harvesting to Above-IC Microbattery Energy Storage

Abstract: An autonomous power generator unit including two micropower sources and their management IC has been fabricated: a RF power receiver and a 1 V miniature thermogenerator combined with a micropower DC/DC up-converter are combined with a 78% efficiency manager and charger, and a 5 nW discharge monitor to manage and store the harvested energy in a 30 above-IC deposited microbattery.

Efficient Power Management Circuit: Thermal Energy Harvesting to Above-IC Microbattery Energy Storage

Abstract: An autonomous power generator unit includes 2 micropower sources and their associated management IC; a 1V miniature thermogenerator and RF power receiver are combined with a micropower DC-DC upconverter, power supply manager and microbattery charger, and a 5nW discharge monitor, to manage and store the harvested energy in a 30mm2 above-IC deposited microbattery.

Ultra-low power and ultra-low voltage bandgap voltage regulator device and method thereof

Abstract: A family of bandgap embodiments are disclosed herein, capable of operating with very low currents and low power supply voltages, using neither any custom devices nor any special manufacturing technology, and fabricated on mainstream standard digital CMOS processes. As such, manufacturing cost can be kept low, manufacturing yields of digital CMOS system-on-a-chip (SOC) that require a reference can be kept optimal, and manufacturing risk can be minimized due to its flexibility with respect to fabrication process node-portability. Although the embodiments disclosed herein use novel techniques to achieve accurate operations with low power and low voltage, this family of bandgaps also uses parasitic bipolar junction transistors (BJT) available in low cost digital CMOS process to generate proportional and complementary to absolute temperature (PTAT and CTAT) voltages via the base-emitter voltage (V EB ) of BJTs and scaling V EB differential pairs to generate the BJTs thermal voltage (V T ).

A low voltage CMOS constant current-voltage reference circuit

Abstract: The proposed CMOS current-voltage reference circuit consists of a traditional bandgap circuit based on the use of PMOS transistors in weak inversion. Its current is stabilized by an on-chip resistor with positive temperature coefficient. The voltage reference is produced by compensating the positive temperature coefficient of a resistor by the negative temperature coefficient of the diode connected PMOS transistor by driving the constant current of the current reference through them. The simulated temperature coefficients of the voltage and the current were less than 85 ppm//spl deg/C and 54 ppm//spl deg/C, respectively, in the worst-case simulation over the temperature range of -10/spl deg/C to 70/spl deg/C without trimming, and the supply-voltage coefficients of the voltage and current were 0.16% over the supply voltage range of 1.1 V to 2.2 V.

A 1.8- V High-Precision Compensated CMOS Bandgap Reference

Abstract: A high-precision temperature-compensated ompensated CMOS bandgap reference is proposed and simulated using tsmc 018-μm process The bandgap reference can be operated from a supply voltage as low as 18-V The proposed circuit generates an output reference voltage of 6151 mV with a variation of ±07 mV over a temperature range from 0 to 70°C The output reference voltage exhibits ± 1mV supply variation from the mean value when the supply changes from 16-V to 24-V The power supply rejection ratio is greater than 35 dB for frequency below 10 kHz The presented bandgap reference occupies only 01 mm2 layout area after trimming