V.L. Rideout

Bio: V.L. Rideout is an academic researcher. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 2, co-authored 2 publications receiving 2864 citations.

Design of ion-implanted MOSFET's with very small physical dimensions

Abstract: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 /spl mu/ were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.

High-κ gate dielectrics: Current status and materials properties considerations

Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

Fundamentals of Modern VLSI Devices

Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

Electronics based on two-dimensional materials

Abstract: The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Abstract: High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices. Finally, the paper explores different circuit techniques to reduce the leakage power consumption.

Dark Silicon and the End of Multicore Scaling

Abstract: A key question for the microprocessor research and design community is whether scaling multicores will provide the performance and value needed to scale down many more technology generations. To provide a quantitative answer to this question, a comprehensive study that projects the speedup potential of future multicores and examines the underutilization of integration capacity-dark silicon-is timely and crucial.