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V. N. Ramakrishnan

Bio: V. N. Ramakrishnan is an academic researcher from VIT University. The author has contributed to research in topics: MOSFET & Memristor. The author has an hindex of 5, co-authored 33 publications receiving 83 citations. Previous affiliations of V. N. Ramakrishnan include Indian Space Research Organisation & Shizuoka University.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a performance enhancement evaluation of n−−−doped graded InGaN drain/source region-based HfO2/InAlN/Aln/Al N/GaN/al N/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate is presented.

18 citations

Journal ArticleDOI
TL;DR: In this paper, the principal thermal conductivities (kx,ky, and kz) of an anisotropic composite medium using an inverse heat transfer analysis were determined using a two-layer feed forward back propagation artificial neural network (ANN) trained using the Levenberg-Marquardt algorithm.
Abstract: This paper reports the results of an experimental study to determine the principal thermal conductivities (kx,ky, and kz) of an anisotropic composite medium using an inverse heat transfer analysis. The direct problem consists of solving the three dimensional heat conduction equation in an orthotropic composite medium with the finite difference method to generate the required temperature distribution for known thermal conductivities. The measurement technique involves dissipating a known heat flux at the central region of a square sample and allowing it to conductively transfer the heat to an aluminium cold plate sink via a square copper ring. At steady state, temperatures at 28 (19 are used for retrievals due to symmetry) discrete locations are logged and used for parameter estimation. The entire measurement process is conducted in a vacuum environment. The inverse heat conduction problem (IHCP) for retrieving the orthotropic thermal conductivity tensor(parameter estimation) is then solved using a two layer feed forward back propagation artificial neural network (ANN) trained using the Levenberg–Marquardt algorithm (LMA), with temperatures as input and thermal conductivity values kx,ky, and kz as the output. The method is first validated against a stainless steel(SS-304) sample of known thermal properties followed by the determination of the orthotropic conductivities of the honeycomb composite material.

18 citations

Journal ArticleDOI
TL;DR: Simulation results reveal that the independent double gate FinFETs in place of access devices in 6T-SRAM does not degrade the soft error performance significantly whereas the independent gate devices inside the cell, in the inverters, degrades the performance significantly.

18 citations

Journal ArticleDOI
TL;DR: A 2D analytical model for transconductance, sub-threshold current and Sub-th threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented and offers basic guidance for design of TMSG MOSfETs.

16 citations

Journal ArticleDOI
TL;DR: In this paper, the benefits accrued by a group of SMEs who have attempted to implement Lean Manufacturing techniques are analyzed and explained in this study and the methodology adopted in implementation and the improvements achieved by these SMEs are analyzed.

12 citations


Cited by
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01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

912 citations

Journal ArticleDOI
31 Jan 2019-Chaos
TL;DR: The proposed mem-elements emulator has a simple mathematical relationship and is constructed with few active devices and passive components, which not only reduces the cost but also facilitates reproduction and facilitates future application research.
Abstract: In this paper, a universal charge-controlled mem-elements (including memristor, memcapacitor, and meminductor) emulator consisting of off-the-shelf devices is proposed. With the unchanged topology of the circuit, the emulator can realize memristor, memcapacitor, and meminductor, respectively. The proposed emulation circuit has a simple mathematical relationship and is constructed with few active devices and passive components, which not only reduces the cost but also facilitates reproduction and facilitates future application research. The grounding and floating forms of the circuit are demonstrated, and Multisim circuit simulation and breadboard experiments validate the emulator's effectiveness. Furthermore, a universal mem-elements chaotic circuit is designed by using the proposed mem-elements emulator and other circuit elements, which is a deformation circuit of Chua's dual circuit. In this circuit, no matter whether the mem-element is memristor, memcapacitor, or meminductor, the chaotic circuit structure does not change, and all can generate hyper-chaos.

133 citations

01 Jan 2014
TL;DR: In this paper, a high performance normally off Al2O3/AlN/GaN MOS-channel high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2O3 gate dielectric and the GaN channel is presented.
Abstract: We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm2/V·s, a high on/off drain current ratio of ~1010, and low dynamic on-resistance degradation.

85 citations

Journal ArticleDOI
TL;DR: In this article, an analytical model of the double gate (DG) MOSFET was presented and the threshold voltage was determined by solving the 2-D Poisson's equation using a parabolic potential approach.
Abstract: In the recent times, the performance of MOSFET in the nanoscaled region attains improvisations through several alternative device structures. Amongst many advanced MOSFET structures, the Double Gate (DG) MOSFET is one such structure which mitigates short channel effects because of its excellent scalability. Among the various structures, FET- based biosensors have shown an accelerated growth recently. Even though many analytical models are available for the Dual Material DG (DMDG) MOSFET structures, this work endeavours to introduce an analytical modeling of nanocavity embedded DMDG structure for the first time. The expression for surface potential is obtained by solving the 2-D Poisson’s equation using a parabolic-potential approach. The threshold voltage is determined from the minimum surface potential model. Sensitivity is computed in terms of relative change in the threshold voltage and it is derived using the model. The influence of various device geometrical parameters like length and thickness of the nanocavity on the sensitivity has been investigated. Further, a comparison of the sensitivity of DG MOSFET and DMDG MOSFET has also been made and the derived results are validated against TCAD simulation results.

37 citations