V. N. Trushin

Bio: V. N. Trushin is an academic researcher from N. I. Lobachevsky State University of Nizhny Novgorod. The author has contributed to research in topics: Thin film & Spark plasma sintering. The author has an hindex of 2, co-authored 8 publications receiving 12 citations.

Manufacturing of Sputtering Composite Targets Containing Phases of Co 2 FeSi or Co 2 MnSi Heusler Alloy

Abstract: The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films.

Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

Abstract: Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.

Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition

Abstract: Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was demonstrated that manganese silicide films revealing ferromagnetic properties are multiphase systems. The phases, which are believed to be non-magnetic at room temperature, are compounds with Mn concentration exceeding the average Mn content of the film (higher manganese silicide, MnSi and Mn5Si3). Magnetic properties revealed are attributed with the secondary phases which are Mn doped silicon (Mn:Si) or Mn depleted compounds. For nearly single phase films (with very small 2-nd phase ratio) no room temperature ferromagnetism was observed.

Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect

Abstract: Skyrmions hold promise for next-generation magnetic storage as their nanoscale dimensions may enable high information storage density and their low threshold for current-driven motion may enable ultra-low energy consumption. Skyrmion-hosting nanowires not only serve as a natural platform for magnetic racetrack memory devices but also stabilize skyrmions. Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. THE is observed in an extended magnetic field-temperature window (15-30 K), suggesting stabilization of skyrmions in nanowires compared with the bulk. Furthermore, we show in nanowires that under the high current density of 10(8)-10(9) A m(-2), the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field in the extended skyrmion phase region. These results open up the exploration of skyrmions in nanowires for fundamental physics and magnetic storage technologies.

High-temperature ferromagnetism in a new n -type Fe-doped ferromagnetic semiconductor (In,Fe)Sb

Abstract: Over the past two decades, intensive studies on various ferromagnetic semiconductor (FMS) materials have failed to realize reliable FMSs that have a high Curie temperature (T C > 300 K), good compatibility with semiconductor electronics, and characteristics superior to those of their nonmagnetic host semiconductors. Here, we demonstrate a new n-type Fe-doped narrow-gap III–V FMS, (In1− x ,Fe x )Sb. Its T C is unexpectedly high, reaching ~335 K at a modest Fe concentration (x) of 16%. The anomalous Hall effect and magnetic circular dichroism (MCD) spectroscopy indicate that the high-temperature ferromagnetism in (In,Fe)Sb thin films is intrinsic and originates from the zinc-blende (In,Fe)Sb alloy semiconductor.

Unveiling the effect of annealing on magnetic properties of nanocrystalline Half-metallic Heusler Co2FeSi alloy glass-coated microwires

Abstract: In this article, we present a new Co2FeSi glass-coated microwire obtained by Taylor-Ulitovsky technique with nanocrystalline structure consisting of a mixture of bcc phase (lattice parameter, a = 5.640 Å, crystalline grain size, Dg = 17.8 nm) in as-prepared sample. The annealing temperature was fixed at 873 K, and the annealing time was 1 and 6 h. The annealing resulted in a significant increase of such nano-grains up to (31.6 nm). Perfect square hysteresis loops have been observed in all annealed samples at a wide temperature range (55–400 K) that are not seen in the as prepared sample. The thermal magnetic behavior for the annealed samples shows dramatic magnetic behavior at low temperature. Large irreversibility magnetic behavior with a blocking temperature (Tb = 150 K) has been observed for annealed sample for 1 h. Critical temperatures of 155 K and 105 K have been detected for annealed samples for 1 h and 6 h, respectively, where the behavior of M−H loops, coercivity and remanence changed. Below the critical point the M−H shows wasp-waisted, multistep magnetic behavior and complex magnetic reversal mechanism is supposed. The anomalous magnetic behavior is due to the coexistence of the ordered and disordered phases induced by annealing conditions below the room temperature. The difference in the magnetization behaviour, remanence, and coercivity values for Co2FeSi glass-coated microwires samples indicates the influence of internal stresses created by the presence of the glass coating. These finding opens the door to design spintronic devices based on the magnetization switching.