scispace - formally typeset
Search or ask a question
Author

V. P. Bhatt

Bio: V. P. Bhatt is an academic researcher from Maharaja Sayajirao University of Baroda. The author has contributed to research in topics: Band gap & Thin film. The author has an hindex of 6, co-authored 14 publications receiving 141 citations.

Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, the growth of tin monoselenide (SnSe) and tin diselenide (snSe2) single crystals by Bridgman-Stockbarger technique was reported.

49 citations

Journal ArticleDOI
TL;DR: In this article, it was observed from the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature.
Abstract: It is observed from the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature. The study of variation in band gap with thickness shows a linear relationship between band gap and 1/t2. Finally, band gap – substrate temperature studies show that the band gap increases with substrate temperature.

27 citations

Journal ArticleDOI
TL;DR: In this paper, the deformation characteristics of KClO4 single crystals have been studied by the methods of static and dynamic indentation on (001) plane and cracks produced by the dynamic indentations have been interpreted in terms of slip-twin interactions.
Abstract: The deformation characteristics of KClO4 single crystals have been studied by the methods of static and dynamic indentation on (001) plane. The cracks produced by the dynamic indentation have been interpreted in terms of slip-twin interactions. Also, the load dependence of Vickers microhardness and its anisotropy in this crystal are reported. The observed hardness anisotropy has been used to confirm the indices of the slip system 〈101〉 〈111〉 operative in this crystal at ordinary temperatures.

23 citations

Journal ArticleDOI
TL;DR: In this article, the effect of Vickers microhardness of InBi single crystals with temperature has been studied and the activation energy for creep has been evaluated and the results are discussed.
Abstract: Variation of Vickers microhardness of InBi single crystals with temperature has been studied. Loading time dependence of the microhardness at different temperatures has been used for the creep study in the temperature range 30° – 85°C. The activation energy for creep has been evaluated and the results are discussed.

19 citations


Cited by
More filters
Journal ArticleDOI
TL;DR: In this article, the reverse type of indentation size effect (ISE), where the apparent microhardness increases with increasing applied test load, was critically examined for the experimentally reported data for a number of single crystals differing in crystal structure and chemical bond, using the theoretical models reported in the literature.

412 citations

Journal ArticleDOI
TL;DR: In this article, the inherent relationship between the structural characteristics and the thermoelectric performance of tin selenide (SnSe) is discussed, including the thermodynamics, crystal structures, and electronic structures.

389 citations

Journal ArticleDOI
TL;DR: The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress and important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed.
Abstract: The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b-axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li-ion batteries, and other emerging fields are also discussed.

216 citations

Journal ArticleDOI
TL;DR: In this paper, a review on the physical properties of tin monoselenide (SnSe) and its device structures in a deeper sense is presented, highlighting the different factors that are limiting the efficiency of SnSe solar cells, and a few suggestions were included to overcome these problems for further improvement of these cells.
Abstract: Currently, selenium (Se)-based compound semiconductors (CISe, CIGSe and CZTSe) are considered as the active materials in the photovoltaic world. However, these materials exhibit couple of issues related to stoichiometry maintenance and scarcity of their constituent elements (In, Ga), which limit their massive production for future energy demands. These issues could be rectified by introducing a non-toxic, inexpensive and earth-abundant binary material. One such material is a tin monoselenide (SnSe), which exhibits a high chemical stability along with attractive physical properties namely, suitable band gap (1.3 eV), high absorption coefficient (105 cm−1) and p-type conductivity. These properties indicate SnSe as a competitive substitute in place of conventional absorbers in thin film solar cells. Despite of its remarkable properties, only a few reports were published on the fabrication of SnSe-based solar cells with poor efficiency (≤1 %). This indicates a need to review on the physical properties of SnSe and its device structures in a deeper sense. In this context, the present review describes the different methods of preparation of SnSe films and their physical properties along with the details of photovoltaic device fabrication. We highlighted the different factors that are limiting the efficiency of SnSe solar cells, and a few suggestions were included to overcome these problems for further improvement of these cells. This review will enrich and stimulate the readers to further investigate the growth of SnSe thin films and their devices, for the development of >20 % efficient SnSe solar cells.

103 citations

Journal ArticleDOI
TL;DR: In this article, hardness and fracture studies were conducted on different planes of flux-grown CaTiO3 and NiTiO 3 single crystals in the applied load range of 0.098-0.98 N, using a Vickers hardness tester.

92 citations