Author
V. R. K. Murthy
Other affiliations: VIT University, Indian Institute of Science, University of Kentucky ...read more
Bio: V. R. K. Murthy is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Dielectric & Rietveld refinement. The author has an hindex of 27, co-authored 162 publications receiving 2595 citations. Previous affiliations of V. R. K. Murthy include VIT University & Indian Institute of Science.
Papers published on a yearly basis
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TL;DR: In this article, a dielectric relaxation study for the hydrogen bonded binary system of polar liquid isopropyl alcohol in nonassociated liquids is carried out, using the HP-LF impedance analyzer in static region, Plunger method in microwave frequency region and Abbe's refractometer in optic region, at different temperature and mole fractions.
12 citations
TL;DR: In this paper, the structure and low frequency dielectric properties of Pb 1 − x Ba x (Yb 1 2 Ta 1/2 )O 3 solid solutions with x = 0.15, 0.20 and 0.30 have been investigated using X-ray diffraction and die-lectric constant measurements.
Abstract: The structure and low frequency dielectric properties of Pb 1 − x Ba x (Yb 1/2 Ta 1/2 )O 3 solid solutions with x = 0.00, 0.10, 0.15, 0.20 and 0.30 have been investigated using X-ray diffraction and dielectric constant measurements. As Ba 2+ concentration increases beyond x = 0.15, the crystal structure changes from monoclinic to pseudocubic at room temperature. The sharp paraelectric-antiferroelectric phase occuring in pure Pb(Yb 1/2 Ta 1/2 )O 3 , remarkably decreases and simultaneously the weak ferroelectric phase gets enhanced with increase in x. The maximum value of the dielectric constant (K max ) varies with x, showing a peak value at x = 0.20 whereas dielectric maximum temperature (T max ) continuously decreases with increase in x. The diffuseness exponent and degree of diffuseness are calculated for x = 0.15, 0.20 and 0.30 by fitting the dielectric data to the modified Curie-Weiss law and the values indicate that the compounds exhibit diffuse phase transition. The paper also discusses the influenc...
12 citations
TL;DR: In this article, the authors used correction factors in the measurement of shift in resonance frequency and full width at half-maximum in the cavity perturbation technique when the sample is inserted partially into the cavity.
Abstract: Suitable correction factors are incorporated in the measurement of shift in resonance frequency and full width at half‐maximum in the cavity perturbation technique when the sample is inserted partially into the cavity. The present approach is observed to be more accurate compared to the available theories and it does not have limitations concerning the shape of the sample. Several standard samples are taken for the present measurement and compared with the full insertion method. Some of the samples are partially inserted into the cavity step by step and the experimental results are compared with the present approach and that of Lehndroff.
12 citations
TL;DR: In this paper, a polycrystalline Ni 0.9− y Cu y Zn 0.1 Fe 1.98 O 4− δ powder was synthesized by conventional solid-state reaction method and X-ray diffraction analysis confirmed single phase cubic spinel phase formation in the calcined powders.
12 citations
TL;DR: In this paper, the dependence of dielectric constant of the BaLn2Ti4O12 (Ln=La, Pr, Nd, Sm) on packing fraction and nephelauxetic ratio is discussed.
Abstract: An attempt has been made to identify the optimum parameters for good dielectric resonator materials. The dependence of dielectric constant of the system BaLn2Ti4O12 (Ln=La, Pr, Nd, Sm) on packing fraction and nephelauxetic ratio is discussed. The reported dielectric data for this system were treated using the multiregression method.
12 citations
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TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
Proceedings Article•
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TL;DR: In this paper, the authors describe photonic crystals as the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures, and the interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.
Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.
2,722 citations
01 Sep 1955
TL;DR: In this paper, the authors restrict their attention to the ferrites and a few other closely related materials, which are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present.
Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.
2,659 citations
TL;DR: In this article, a 3d transition metal-doped ZnO films (n-type Zn1−xMxO) were formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties were examined.
Abstract: 3d-transition-metal-doped ZnO films (n-type Zn1−xMxO (x=005–025): M=Co, Mn, Cr, Ni) are formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties are examined The Co-doped ZnO films showed the maximum solubility limit Some of the Co-doped ZnO films exhibit ferromagnetic behaviors with the Curie temperature higher than room temperature The magnetic properties of Co-doped ZnO films depend on the concentration of Co ions and carriers
1,852 citations
TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
Abstract: Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. T...
968 citations