V
V. R. Kolagunta
Researcher at Purdue University
Publications - 11
Citations - 1243
V. R. Kolagunta is an academic researcher from Purdue University. The author has contributed to research in topics: Quantum tunnelling & Contact resistance. The author has an hindex of 8, co-authored 11 publications receiving 1234 citations.
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Journal ArticleDOI
Self-Assembly of a Two-Dimensional Superlattice of Molecularly Linked Metal Clusters
Ronald P. Andres,J. D. Bielefeld,Jason I. Henderson,David B. Janes,V. R. Kolagunta,Clifford P. Kubiak,William Mahoney,Richard G. Osifchin +7 more
TL;DR: In this article, a planar array of nanometer-diameter metal clusters that are covalently linked to each other by rigid, double-ended organic molecules have been self-assembled.
Journal ArticleDOI
Room temperature Coulomb blockade and Coulomb staircase from self‐assembled nanostructures
Ronald P. Andres,Supriyo Datta,Matt Dorogi,Juan Carlos Osorio Gómez,Jason I. Henderson,David B. Janes,V. R. Kolagunta,Clifford P. Kubiak,William Mahoney,R. F. Osifchin,Ron Reifenberger,Manoj P. Samanta,Weidong Tian +12 more
TL;DR: In this paper, a self-assembly of well-characterized, nanometer-size Au clusters into ordered monolayer arrays spanning several microns has been achieved and techniques to insert molecular wires to link adjacent clusters in the selfassembled array have also been developed.
Journal ArticleDOI
Electronic conduction through 2D arrays of nanometer diameter metal clusters
David B. Janes,V. R. Kolagunta,Richard G. Osifchin,J. D. Bielefeld,Ronald P. Andres,Jason I. Henderson,Clifford P. Kubiak +6 more
TL;DR: In this article, an experimental study of electrical conduction through arrays of nanometer-diameter metallic clusters linked by organic molecules is presented, where gold clusters, having diameters of ∼4 nm and encapsulated by a monolayer of dodecanethiol, are deposited from solution on to specially prepared substrates.
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An ohmic nanocontact to GaAs
Takhee Lee,Jia Liu,David B. Janes,V. R. Kolagunta,J. Dicke,Ronald P. Andres,Jochen A. Lauterbach,M. R. Melloch,D. T. McInturff,Jerry M. Woodall,Ron Reifenberger +10 more
TL;DR: In this paper, the formation and characterization of nanometer-size, ohmic contacts to n-type GaAs substrates are described, where the nanocontacts are formed between a single-crystalline, nanometer size Au cluster and a GaAs structure capped with layer of low-temperature grown GaAs (LTG:GaAs).
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Vertical three-terminal structures in semiconductor heterostructure quantum wells using a novel sidewall gating technique
TL;DR: In this paper, a self-aligned sidewall gating technique was used for the fabrication of gated resonant tunneling devices with active mesa areas in the sub-micron regime.