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V.V. Andrievsky

Bio: V.V. Andrievsky is an academic researcher. The author has contributed to research in topics: Magnetoresistance & Thin film. The author has an hindex of 1, co-authored 1 publications receiving 13 citations.

Papers
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TL;DR: In this article, the magnetic field dependence of σ xx and σ yx, calculated from an analysis of the data on ϱ, Δϱ/ϱ and the Hall e.m.f., and using the formula of the two-band model for strong and weak magnetic fields, was obtained.

13 citations


Cited by
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Journal ArticleDOI
TL;DR: In this article, bismuth films were studied to a thickness t in the range of 300-14000 A. The resistivity ϱ, Hall coefficient RH, magnetoresistance Δϱ/(ϱB2) and the 1/f noise were measured as functions of thickness at room temperature.

19 citations

Journal ArticleDOI
TL;DR: In this article, the dependence of zero magnetic field resistivity as well as low magnetic field Hall and magnetoresistance coefficients of undoped polycrystalline bismuth films on thickness and doping concentration in the temperature interval from 100 to 300 K was investigated.
Abstract: An investigation is made of the dependence of zero magnetic field resistivity as well as low magnetic field Hall and magnetoresistance coefficients of undoped as well as Te-, Sn-, and Ga-doped polycrystalline bismuth films on thickness and doping concentration in the temperature interval from 100 to 300 K. The films are deposited onto amorphous substrates by means of simultaneous thermal evaporation from two different sources for the host and dopant material, respectively. Doping does not alter the structure of the films significantly. The galvanomagnetic measurements are carried out using van der Pauw's technique with the magnetic field perpendicular to the film plane. Der spezifische Widerstand in Abwesenheit eines Magnetfeldes sowie die Hall- und Magnetowiderstandskoeffizienten im schwachen Magnetfeld von undotierten sowie von Te-, Sn- und Ga-dotierten polykristallinen Wismutschichten werden in Abhangigkeit von der Schichtdicke und der Dotierungskonzentration bei Temperaturen zwischen 100 und 300 K untersucht. Die Beschichtung erfolgt auf amorphen Substraten durch gleichzeitige thermische Verdampfung aus zwei unterschiedlichen Quellen fur das Wirts- bzw. Dotierungsmaterial. Die Dotierung verandert die Schichtstruktur nicht signifikant. Die galvanomagnetischen Messungen werden mit der van der Pauwschen Methode in einem senkrecht zur Schichtebene gerichteten Magnetfeld durchgefuhrt.

11 citations

Journal ArticleDOI
01 Mar 1981-Vacuum
TL;DR: In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.

9 citations

Journal ArticleDOI
TL;DR: In this paper, the carrier mobilities and concentrations of polycrystalline films of Bi0.87Sb0.13 with thicknesses between 30 and 330 nm are presented and discussed in the temperature range between 80 and 360 K.
Abstract: The carrier mobilities and concentrations of polycrystalline films of Bi0.87Sb0.13 with thicknesses between 30 and 330 nm are presented and discussed in the temperature range between 80 and 360 K. They are calculated from the electrical conductivity as well as the low-field Hall and magnetoresistance coefficients in a magnetic field directed orthogonally to the film plane. An anisotropic two-carrier model is taken as a basis for the calculation. Die Ladungstragerbeweglichkeiten und -konzentrationen von polykristallinen Bi0,87Sb0,13-Schichten mit Schichtdicken zwischen 30 und 330 nm werden fur Temperaturen zwischen 80 und 360 K berechnet und diskutiert. Die Berechnung stutzt sich auf Messungen der spezifischen Leitfahigkeit sowie des Hall- und des Magnetowiderstandskoeffizienten im schwachen Magnetfeld, wobei das Magnetfeld senkrecht zur Schichtebene orientiert ist. Als Grundlage fur die Berechnung wird ein anisotropes Zweitragermodell angewendet.

7 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical resistivity ϱ, the magnetic resistivity Δϱ/ϱ and the Hall coefficient R H for Bi 1− x Sb x epitaxial thin films as a function of antimony concentration in the range 0 ⩽ x ⪅ 0.15 at 4.2 K were investigated.

6 citations