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Author

V. Vlatkovic

Bio: V. Vlatkovic is an academic researcher. The author has contributed to research in topics: Pulse-width modulation & Leakage inductance. The author has an hindex of 3, co-authored 3 publications receiving 1257 citations.

Papers
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Proceedings ArticleDOI
11 Mar 1990
TL;DR: In this article, a steady-state analysis is presented with complete characterization of the converter operation and the design procedures based on the analysis are presented and the various losses in the circuit assessed.
Abstract: A steady-state analysis is presented with complete characterization of the converter operation. A small-signal model of the converter is established. The design procedures based on the analysis are presented and the various losses in the circuit assessed. Critical design considerations for a high-power, high-voltage application are analyzed. The results of the analysis are verified using a high-voltage. 2 kW prototype. >

875 citations

Journal ArticleDOI
TL;DR: In this article, specific circuit effects in the phase-shifted PWM (PS-PWM) converter and their impact on the converter dynamics are analyzed, and the small-signal model is derived incorporating the effects of phase-shift control and the utilization of transformer leakage inductance and power FET junction capacitances to achieve zero-voltage resonant switching.
Abstract: The specific circuit effects in the phase-shifted PWM (PS-PWM) converter and their impact on the converter dynamics are analyzed. The small-signal model is derived incorporating the effects of phase-shift control and the utilization of transformer leakage inductance and power FET junction capacitances to achieve zero-voltage resonant switching. The differences in the dynamic characteristics of the PS-PWM converter and its PWM counterpart are explained. Model predictions are confirmed by experimental measurements. >

234 citations

Proceedings ArticleDOI
10 Mar 1991
TL;DR: In this paper, the authors present the analysis, design, and applications of a high-voltage, high-power, zerovoltage switched (ZVS), full-bridge (FB) pulsewidth-modulated (PWM) converter with an active snubber in the secondary circuit.
Abstract: The authors present the analysis, design, and applications of a high-voltage, high-power, zero-voltage switched (ZVS), full-bridge (FB) pulse-width-modulated (PWM) converter with an active snubber in the secondary circuit. The nondissipative snubber completely eliminates the voltage overshoot and ringing across the rectifiers. The ringing of the parasitic capacitance of the rectifiers and the leakage inductance of the transformer are eliminated in a nondissipative manner, thus increasing the overall efficiency of the circuit. The active snubber employs only a high-voltage low-power MOSFET and a high-voltage capacitor. The control of the snubber switch is simple and utilizes the PWM signal to control the primary switches with a time delay. The authors also present the complete steady-state analysis of the ZVS-FB-PWM converter employing the active snubber. The analysis shows that the transformer secondary voltage is a function of the steady-state duty cycle and gives the equation to calculate the steady-state secondary voltage. The results of the analysis are in good agreement with the experimental results. >

205 citations


Cited by
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Journal ArticleDOI
29 Jun 1992
TL;DR: In this paper, a class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses.
Abstract: A class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses. The boost ZVT-PWM converter is used as an example to illustrate the operation of these converters. A 300 kHz, 600 W ZVT-PWM boost, DC-DC converter, and a 100 kHz, 600 W power factor correction circuit using the ZVT-PWM technique and an insulated gate bipolar transistor (IGBT) device were breadboarded to show the operation of the proposed converters. It is shown that the circuit technology greatly improves the converter performance in terms of efficiency, switching noise, and circuit reliability. >

896 citations

Journal ArticleDOI
11 Jun 1990
TL;DR: In this article, the authors presented an improved soft-switching full-bridge converter which is especially suitable for high-power application (e.g. more than 1 kW output) because of its inherently high efficiency.
Abstract: The authors present an improved soft-switching full-bridge converter which is especially suitable for high-power application (e.g. more than 1 kW output) because of its inherently high efficiency. The addition of an external commutating inductor and two clamp diodes to the phase-shifted PWM (pulse width modulation) full-bridge DC-DC converter substantially reduced the switching losses of the transistors and the rectifier diodes, under all loading conditions. The authors analyze the conditions for lossless transitions, discuss the effect of the added components on the operation of the converter, and present practical considerations and test results for a 1.5 kW converter with 100 kHz clock frequency. The converter has an efficiency above 95% at 60 V output, is free from voltage overshoots, and exhibits well-controlled transitions for all switch and rectifier voltages and currents. >

426 citations

Journal ArticleDOI
20 Jun 1993
TL;DR: In this article, a new family of zero-current transition (ZCT) pulsewidth-modulated (PWM) converters is proposed for high power applications where the minority-carrier semiconductor devices (such as IGBTs, BJTs, and MCTs) are predominantly used as the power switches.
Abstract: A new family of zero-current-transition (ZCT) pulse-width-modulated (PWM) converters are proposed. The new family of converters implements zero-current turn-off for power transistor(s) without increasing voltage/current stresses and operates at a fixed frequency. The proposed converters are deemed most suitable for high-power applications where the minority-carrier semiconductor devices (such as IGBTs, BJTs, and MCTs) are predominantly used as the power switches. Theoretical analysis is verified on a 100-kHz, 1-kW ZCT-PWM boost converter using an IGBT. >

384 citations

Journal ArticleDOI
10 Dec 2019
TL;DR: The benefits of using the solid-state transformers in the XFC stations to replace the conventional line-frequency transformers and a comprehensive review of the medium-voltage SST designs for the X FC application are considered.
Abstract: With the number of electric vehicles (EVs) on the rise, there is a need for an adequate charging infrastructure to serve these vehicles. The emerging extreme fast-charging (XFC) technology has the potential to provide a refueling experience similar to that of gasoline vehicles. In this article, we review the state-of-the-art EV charging infrastructure and focus on the XFC technology, which will be necessary to support the current and future EV refueling needs. We present the design considerations of the XFC stations and review the typical power electronics converter topologies suitable to deliver XFC. We consider the benefits of using the solid-state transformers (SSTs) in the XFC stations to replace the conventional line-frequency transformers and further provide a comprehensive review of the medium-voltage SST designs for the XFC application.

382 citations

Journal ArticleDOI
TL;DR: In this article, an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs).
Abstract: This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs). The proposed level 2 charger has a two-stage architecture where the first stage is a bridgeless boost ac-dc converter and the second stage is a phase-shifted full-bridge isolated dc-dc converter. The operation of both topologies is presented and the specific advantages gained through the use of SiC power devices are discussed. The design of power stage components, the packaging of the multichip power module, and the system-level packaging is presented with a primary focus on system density and a secondary focus on system efficiency. In this work, a hardware prototype is developed and a peak system efficiency of 95% is measured while operating both power stages with a switching frequency of 200 kHz. A maximum output power of 6.1 kW results in a volumetric power density of 5.0 kW/L and a gravimetric power density of 3.8 kW/kg when considering the volume and mass of the system including a case.

355 citations