Author
Vaibhav G. Marathe
Bio: Vaibhav G. Marathe is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Gate oxide & Oxide. The author has an hindex of 2, co-authored 2 publications receiving 16 citations.
Papers
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TL;DR: In this paper, the authors correlated the electrical characteristics of ultrathin gate oxide with the presence of pinholes by C-AFM studies and showed that the improvement in the gate leakage current in thermally grown oxide is indeed due to the filling of pinhole by selective anodic oxidation.
10 citations
TL;DR: In this paper, the effect of oxidation temperature on the quality and reliability of the ultrathin oxide was studied and it was observed that for the same oxide thickness, MOS capacitors exhibit a higher leakage current and lower breakdown voltage when the oxide is grown at a lower temperature.
7 citations
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TL;DR: In this paper, the authors demonstrate that manganese (Mn) can catalyze the growth of single-walled carbon nanotubes (SWNTs) with high efficiency via a chemical vapor deposition process.
Abstract: We demonstrate that manganese (Mn) can catalyze the growth of single-walled carbon nanotubes (SWNTs) with high efficiency via a chemical vapor deposition process. Dense and uniform SWNT films with high quality were obtained by using a Mn catalyst, as characterized by scanning electron microscopy, Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. Moreover, we found that the surface property of the substrate plays a critical role in the growth efficiency of SWNTs. By deposition of a thin oxide layer (SiO2 or Al2O3) on the top of a SiO2/Si substrate, the growth efficiency of SWNTs was dramatically improved. The successful growth of SWNTs by Mn catalyst provides new experimental information for understanding the growth mechanism of SWNTs, which may be helpful for their controllable synthesis.
42 citations
TL;DR: The lithiation of SiO2-coated Si is studied in a controlled manner usingSiO2 coatings of different thicknesses grown on Si wafers via thermal oxidation to occur via rapid transport of Li along the SiO 2/Si interface radially outward from an existing pinhole, followed by the lithiation from the interface outwards.
Abstract: Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and t...
32 citations
TL;DR: In this article, the electron effective mass for direct tunneling in silicon dioxide (SiO2) was determined by exploiting a long term intrinsic charge-up process of vacant defects adjacent to the SiO2 barrier by capacitance-voltage (CV) measurements.
Abstract: The electron effective mass for direct tunneling (EETM) in silicon dioxide (SiO2) was determined by many authors using a high bias field for obtaining direct measurable direct tunneling current densities (TCDs), leaving some ambiguity to the electron kinetic energy at/within the SiO2 barrier. A determination of the EETM by exploiting a long term intrinsic charge-up process of vacant defects adjacent to the SiO2 barrier by capacitance–voltage (CV) measurements is reported. The EETM is obtained by using the fixed charge sheet densities for iterating the TCD as a function of time. The zero bias field renders the average electron kinetic energy to converge on the thermal energy, leaving less ambiguity to the EETM. For an SiO2 layer of d SiO 2 = 8.2 nm , an EETM of meff = (0.3 ± 0.03)m0 is obtained.
24 citations
TL;DR: In this article, the electrical and reliability properties of ultrathin silicon dioxide, grown by immersing silicon in nitric acid solution have been studied, and it is observed that the temperature, oxidation time, and concentration of the nitric acids solution play important roles in determining the thickness as well as the quality of the oxide.
Abstract: In this paper, electrical and reliability properties of ultrathin silicon dioxide, grown by immersing silicon in nitric acid solution have been studied. It is observed that the temperature, oxidation time, and concentration of the nitric acid solution play important roles in determining the thickness as well as the quality of the oxide. Prolonged exposure to nitric acid degrades the quality of the oxide. However, it was found necessary to reduce the oxidation temperature and the concentration of nitric acid to grow oxide of thickness 2 nm. In these conditions, the leakage current and fixed oxide charge in the chemical oxide were found to be too high. However, when this chemical oxidation was followed by anodic oxidation using ac bias, the electrical and reliability characteristics of metal-oxide-semiconductor (MOS) devices showed tremendous improvement. A MOSFETs with gate oxide grown by this technique have demonstrated low subthreshold slope, high transconductance and channel mobility. It is thus proposed that chemical oxidation followed by ac anodization can be a viable alternative low-temperature technique to grow thin oxides for MOS application.
9 citations
TL;DR: In this article, a tilted-substrate sputtering technique, which provides various film thicknesses in one processing step, was proposed and useful for the characterization of charge distribution in low-temperature dielectric stacks with anodic oxide interfacial layer (ANO-IL).
Abstract: Hafnium oxide dielectric stacks with anodic oxide interfacial layer (ANO-IL) were investigated under low-temperature consideration. A tilted-substrate sputtering technique, which provides various film thicknesses in one processing step, was proposed and useful for the characterization of charge distribution. It was found that charges existed in the HfO2/ANO-IL were smaller than that in HfO2/rapid-thermal-oxidation IL. The prepared samples exhibit good electrical characteristics, including small electrical hysteresis (< 10 mV), low leakage current, high effective dielectric breakdown field of 12.7 MV/cm, and maximum operating voltages of -2.74 V at 25degC and -2.32 V at 125degC for EOT = 2.3 nm stacks under a ten-year lifetime evaluation. The results suggest that the quality of IL in the dielectric stack is a critical reliability issue and that ANO is provided as a candidate for IL consideration of low-temperature dielectric stacks.
9 citations