According to W. Edwards Deming, American companies require nothing less than a transformation of management style and of governmental relations with industry. In Out of the Crisis, originally published in 1982, Deming offers a theory of management based on his famous 14 Points for Management. Management's failure to plan for the future, he claims, brings about loss of market, which brings about loss of jobs. Management must be judged not only by the quarterly dividend, but by innovative plans to stay in business, protect investment, ensure future dividends, and provide more jobs through improved product and service. In simple, direct language, he explains the principles of management transformation and how to apply them.

Out of the Crisis

Hominids—both living and past—exhibit considerable variation in body size and shape. Both theoretical considerations and empirical observations indicate that some of this variation may be attributable to climatic adaptation. Application of the simple thermoregulatory principle of increasing and decreasing body surface area/body mass in hot and cold climates, respectively, may explain the major systematic differences in body form between living and fossil hominids inhabiting tropical and higher latitude regions of the world. Consideration of potential climatic influences on morphology has important ramifications for reconstructing body form and behavior of past hominids, interpreting geographic and temporal variability and migrational events, explaining the origins and perfection of hominid bipedalism, and better understanding changes in brain size and encephalization during hominid evolution. © 1994 Wiley-Liss, Inc.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ajpa.1330370605

Morphological adaptation to climate in modern and fossil hominids

Graphene-based gas/vapor sensors have attracted much attention in recent years due to their variety of structures, unique sensing performances, room-temperature working conditions, and tremendous application prospects, etc. Herein, we summarize recent advantages in graphene preparation, sensor construction, and sensing properties of various graphene-based gas/vapor sensors, such as NH3, NO2, H2, CO, SO2, H2S, as well as vapor of volatile organic compounds. The detection mechanisms pertaining to various gases are also discussed. In conclusion part, some existing problems which may hinder the sensor applications are presented. Several possible methods to solve these problems are proposed, for example, conceived solutions, hybrid nanostructures, multiple sensor arrays, and new recognition algorithm.

/pdf/a-review-on-graphene-based-gas-vapor-sensors-with-unique-3yvc87wwd5.pdf

A Review on Graphene-Based Gas/Vapor Sensors with Unique Properties and Potential Applications

http://ieeexplore.ieee.org/iel5/5/31324/01456901.pdf

Microelectronic circuits

Japanese Journal of Applied Physicsの創刊

We calculate the mobility of carriers in a quantum well structure when they are scattered by ionized impurities in the size‐quantum limit (SQL) where the carriers are assumed to populate only the lowest quantized energy level. It is found that the probability of scattering due to ionized impurities decreases with the well thickness in contrast to the case of acoustic phonon scattering where the scattering probability is enhanced under the conditions of the SQL. The temperature and thickness dependence of the mobility depends critically on the screening of the Coulomb potential due to the presence of the ionized impurities.

Impurity scattering limited mobility in a quantum well heterojunction

Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon-based electronics. Budding GNRFET, using the circuit-level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy-delay product (EDP) and power-delay product (PDP) of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current-voltage (- and -), for subthreshold swing (SS), drain-induced barrier lowering (DIBL), and current on/off ratio for circuit implementation is given. GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

https://downloads.hindawi.com/journals/jnm/2014/879813.pdf

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum-confined leading to a digital (quantized) energy spectrum. We report the salient features of the mobility and saturation velocity controlling the charge transport in a semiconducting single-walled CNT (SWCNT) channel. The ultimate drift velocity in SWCNT due to the high-electric-field streaming is based on the asymmetrical distribution function that converts randomness in zero-field to a stream-lined one in a very high electric field. Specifically, we show that a higher mobility in an SWCNT does not necessarily lead to a higher saturation velocity that is limited by the mean intrinsic velocity depending upon the band parameters. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. However, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration. The velocity that saturates in a high electric field can be lower than the intrinsic velocity due to onset of a quantum emission. In an SWCNT, the mobility may also become ballistic if the length of the channel is comparable or less than the mean free path.

/pdf/the-ultimate-ballistic-drift-velocity-in-carbon-nanotubes-2whvo8js9r.pdf

The ultimate ballistic drift velocity in carbon nanotubes

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80nm MOSFET, excellent agreement to the experimental data is obtained.

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

We present a theory that makes an explicit connection between scattering-limited Ohmic mobility and quantum-emission-limited saturation velocity. The theory is applied to electrons in bulk silicon by taking a quantum equal to the energy of an optical phonon. A modification in the mean-free path because of this quantum emission is indicated, an effect that appears only in the high-field regime. This modification is shown to lead to electric-field-induced degradation of the diffusion coefficient. The theory presented agrees well with the drift-diffusion experimental data and empirical relations used in modeling devices. The theory makes connections with an alternate description in terms of electron temperature under ac and dc conditions. Because drift-diffusion processes are central in performance evaluation of submicron-scale devices in which high fields are necessarily present, these results contribute significantly to reshaping thinking processes in the high-field regime.

Vijay K. Arora

Papers

Impurity scattering limited mobility in a quantum well heterojunction

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

The ultimate ballistic drift velocity in carbon nanotubes

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field