V
Vipindas Pala
Researcher at Cree Inc.
Publications - 58
Citations - 1288
Vipindas Pala is an academic researcher from Cree Inc.. The author has contributed to research in topics: Power semiconductor device & Semiconductor device. The author has an hindex of 16, co-authored 58 publications receiving 1101 citations. Previous affiliations of Vipindas Pala include Research Triangle Park & Rensselaer Polytechnic Institute.
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Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Proceedings ArticleDOI
10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems
Vipindas Pala,Edward Van Brunt,Lin Cheng,Michael J. O'Loughlin,Jim Richmond,Albert A. Burk,Scott Allen,David Grider,John W. Palmour,Charles Scozzie +9 more
TL;DR: In this article, the authors developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8 mm2 and a specific on-resistance (RON, SP) of 100 MΩ-cm2 at 25 °C.
Journal ArticleDOI
27 kV, 20 A 4H-SiC n-IGBTs
Edward Van Brunt,Lin Cheng,Michael J. O'Loughlin,Jim Richmond,Vipindas Pala,John W. Palmour,Charles W. Tipton,Charles Scozzie +7 more
TL;DR: In this article, a block voltage of 27 kV, 20 A 4H-SiC n-IGBTs was achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination.
Journal ArticleDOI
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
TL;DR: In this article, the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications are evaluated and compared.
Proceedings ArticleDOI
22 kV, 1 cm 2 , 4H-SiC n-IGBTs with improved conductivity modulation
Edward Van Brunt,Lin Cheng,Michael J. O'Loughlin,Craig Capell,Charlotte Jonas,Khiem Lam,Jim Richmond,Vipindas Pala,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,John W. Palmour,Charles Scozzie +12 more
TL;DR: In this article, a thermal oxidation process was applied to enhance the carrier lifetime prior to the device fabrication, and the lifetime enhanced devices displayed nearly 1 V lower forward voltage drop with little increase in switching energy and no degradation of static blocking.