Virginie Nodjiadjim

Bio: Virginie Nodjiadjim is an academic researcher from Bell Labs. The author has contributed to research in topics: Heterojunction bipolar transistor & Amplifier. The author has an hindex of 10, co-authored 37 publications receiving 291 citations.

84-, 100-, and 107-GBd PAM-4 Intensity-Modulation Direct-Detection Transceiver for Datacenter Interconnects

Abstract: We report on an ultrahigh-speed PAM-based IM/DD optical subsystem featuring compact signal generation and tractable digital-processing complexity. The proposed transceiver is based on two main technologies: an InP DHBT selector power DAC for electrical signal generation, and a complexity-optimized receiver processing chain. We show how the complexity of the feed-forward equalizer can be considerably reduced by stacking a <3-symbol memory sequence estimator. Finally, we experimentally demonstrate successful signal recovery for 107-GBd PAM-4 in back-to-back configuration, and after 500 m and 1 km of transmission over standard single-mode fiber for 100- and 84-GBd PAM-4 configuration, respectively. A power-budget margin above 2 dB is attained in all cases.

204-GBaud On-Off Keying Transmitter for Inter-Data Center Communications

Abstract: We demonstrate an on-off keyed transmitter with direct detection, at record symbol rates of 204Gbaud and 140Gbaud, over 10km and 80km, respectively, powered by a high-speed InP-based 2:1 selector and travelling-wave electro-absorption laser-modulator.

140/180/204-Gbaud OOK Transceiver for Inter- and Intra-Data Center Connectivity

Abstract: We report on an on – off keying intensity-modulation and direct-detection C-band optical transceiver capable of addressing all datacenter interconnect environments at well beyond 100 Gbaud. For this, the transmitter makes the use of two key InP technologies: a 2:1 double heterojunction bipolar transistor selector multiplexer and a monolithically integrated distributed-feedback laser traveling-wave electro-absorption modulator, both exceeding 100-GHz of 3-dB analog bandwidth. A preamplified 110-GHz PIN photodiode prior to a 100-GHz analog-to-digital converter complete the ultrahigh bandwidth transceiver module; the device under study. In the experimental work, which discriminates between intra- and inter-data center scenarios (dispersion unmanaged 120, 560, and 960 m; and dispersion-managed 10 and 80 km of standard single-mode fiber), we evaluate the bit-error rate evolution against the received optical power at 140, 180, and 204 Gbaud on – off keying for different equalization configurations (adaptive linear filter with and without the help of short-memory sequence estimation) and forward error correction schemes (hard-decision codes with 7% and 20% overhead); drawing conclusions from the observed system-level limitations of the respective environments at this ultrahigh baudrate, as well as from the operation margins and sensitivity metrics. From the demonstration, we highlight three results: successful operation with >6-dB sensitivity margin below the 7% error-correction at 140 Gbaud over the entire 100 m–80 km range with only linear feed-forward equalization. Then, the transmission of a 180-Gbaud on – off keying carrier over 80 km considering 20% error-correction overhead. Finally, a 10-km communication at 204 Gbaud on – off keying with up to 6 dB sensitivity margin, and regular 7% overhead error-correction.

Extreme Speed Power-DAC: Leveraging InP DHBT for Ultimate Capacity Single-Carrier Optical Transmissions

Abstract: Power-digital-to-analog converters (DAC) circuits for high capacity and high spectral efficiency optical transmitters are presented in this paper. They are based on a 0.7- μ m InP DHBT semiconductor process, of which main differentiating characteristics are highlighted. We introduce the Power-DAC circuit concept, its usual architectures, and we provide design details of its latest generation. Named SPDAC, it integrates multiplexing front-end blocks composed of three 2:1-selectors. With this architecture, the input interface operates at half rate. 107-GBd operation for PAM-4 and 64-GBd for PAM-8 were demonstrated with quality suitable for direct detection and datacenter applications. 90-GBd operation in a PDM-64QAM transmitter with coherent detection was also enabled by SPDAC modules. With 3.7 to 4 V differential output voltage swing, Power-DAC circuits can be directly connected to different types of E/O modulators (Mach–Zehnder, EAM). We show in particular how the SPDAC circuit enables single-carrier transmission at 100-GBd in PAM-4 IM/DD modulation for datacenters. In this experiment, the feed-forward equalizer combined with stacking a <3-symbol memory sequence estimator demonstrated signal recovery for 107-GBd PAM-4 in back-to-back configuration, after 500 m and 1 km of transmission over standard single-mode fiber for 100- and 84-GBd PAM-4 configuration, respectively.

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Abstract: Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33=2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach–Zehnder modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5-mm-long device amounts to 210 mV, leading to a voltage-length product of UπL=320 Vμm—the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have a major impact in the field of optical communications, but will also open new avenues towards ultrafast photonic-electronic signal processing.

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design.

Abstract: The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product UπL and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.

200 Gbps/Lane IM/DD Technologies for Short Reach Optical Interconnects

Abstract: Client-side optics are facing an ever-increasing upgrading pace, driven by upcoming 5G related services and datacenter applications. The demand for a single lane data rate is soon approaching 200 Gbps. To meet such high-speed requirement, all segments of traditional intensity modulation direct detection (IM/DD) technologies are being challenged. The characteristics of electrical and optoelectronic components and the performance of modulation, coding, and digital signal processing (DSP) techniques are being stretched to their limits. In this context, we witnessed technological breakthroughs in several aspects, including development of broadband devices, novel modulation formats and coding, and high-performance DSP algorithms for the past few years. A great momentum has been accumulated to overcome the aforementioned challenges. In this article, we focus on IM/DD transmissions, and provide an overview of recent research and development efforts on key enabling technologies for 200 Gbps per lane and beyond. Our recent demonstrations of 200 Gbps short-reach transmissions with 4-level pulse amplitude modulation (PAM) and discrete multitone signals are also presented as examples to show the system requirements in terms of device characteristics and DSP performance. Apart from digital coherent technologies and advanced direct detection systems, such as Stokes–vector and Kramers–Kronig schemes, we expect high-speed IM/DD systems will remain advantageous in terms of system cost, power consumption, and footprint for short reach applications in the short- to mid- term perspective.

Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

Abstract: Increasing the modulation speed of semiconductor lasers has attracted much attention from the viewpoint of both physics and the applications of lasers. Here we propose a membrane distributed reflector laser on a low-refractive-index and high-thermal-conductivity silicon carbide substrate that overcomes the modulation bandwidth limit. The laser features a high modulation efficiency because of its large optical confinement in the active region and small differential gain reduction at a high injection current density. We achieve a 42 GHz relaxation oscillation frequency by using a laser with a 50-μm-long active region. The cavity, designed to have a short photon lifetime, suppresses the damping effect while keeping the threshold carrier density low, resulting in a 60 GHz intrinsic 3 dB bandwidth (f3dB). By employing the photon–photon resonance at 95 GHz due to optical feedback from an integrated output waveguide, we achieve an f3dB of 108 GHz and demonstrate 256 Gbit s−1 four-level pulse-amplitude modulations with a 475 fJ bit−1 energy cost of the direct-current electrical input. Directly modulated membrane distributed reflector lasers are fabricated on a silicon carbide platform. The 3 dB bandwidth, four-level pulse-amplitude modulation speed and operating energy for transmitting one bit are 108 GHz, 256 Gbit s−1 and 475 fJ, respectively.