Organic photovoltaics (OPV) have the advantage of possible fabrication by energy-efficient and cost-effective deposition methods, such as solution processing. Solvent additives can provide fine control of the active layer morphology of OPVs by influencing film formation during solution processing. As such, solvent additives form a versatile method of experimental control for improving organic solar cell device performance. This review provides a brief history of solution-processed bulk heterojunction OPVs and the advent of solvent additives, putting them into context with other methods available for morphology control. It presents the current understanding of how solvent additives impact various mechanisms of phase separation, enabled by recent advances in in situ morphology characterization. Indeed, understanding solvent additives' effects on film formation has allowed them to be applied and combined effectively and synergistically to boost OPV performance. Their success as a morphology control strategy has also prompted the use of solvent additives in related organic semiconductor technologies. Finally, the role of solvent additives in the development of next-generation OPV active layers is discussed. Despite concerns over their environmental toxicity and role in device instability, solvent additives remain relevant morphological directing agents as research interests evolve toward nonfullerene acceptors, ternary blends, and environmentally sustainable solvents.

Solvent Additives: Key Morphology‐Directing Agents for Solution‐Processed Organic Solar Cells

Paper, as a flexible, low-cost, lightweight, tailorable, environmental-friendly, degradable, and renewable material, is emerging in electronic devices Especially, many kinds of paper-based (PB) sensors have been reported for wearable applications in recent years Among them, the PB gas, humidity, and strain sensors are widely studied for monitoring gas, humidity, and strain from the human body and the environment However, gas, humidity, and strain often coexist and interact, and the paper itself is hydrophilic and flexible, resulting in that it is still challenging to develop high-performance PB sensors specialized for gas, humidity, and strain detections Therefore, it is necessary to summarize and discuss them systematically In this review, we focus on summarizing the state-of-art studies of the PB gas, humidity, and strain sensors Specifically, the fabrications (electrodes and sensing materials) and applications of PB gas, humidity, and strain sensors are summarized and discussed The current challenges and the potential trends of PB sensors for gas, humidity, and strain detections are also outlined This review not only can help readers to understand the development status of the PB gas, humidity, and strain sensors but also is helpful for readers to find out and solve the problems in this field through comparative reading

Paper-Based Sensors for Gas, Humidity, and Strain Detections: A Review.

Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.

Flexible Sensors—From Materials to Applications

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

https://www.mdpi.com/2079-4991/10/8/1437/pdf

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.

Organic transistors are being developed for a variety of flexible electronics applications. They are usually fabricated on polymeric substrates, but considering the significant negative impact of plastic waste on the global environment and taking into account the many desirable properties of paper, there have also been efforts to use paper as a substrate for organic transistors. In this review we provide a brief overview of these efforts.

/pdf/organic-transistors-on-paper-a-brief-review-2hzhqa9208.pdf

Organic transistors on paper: a brief review

Organic FETs (OFETs) with bilayer dielectric poly(4-vinylphenol) (PVP)/HfO2 and polyvinyl alcohol (PVA)/HfO2 were fabricated on a flexible low-cost Kapton tape substrate with TIPS -pentacene:polystyrene as an active layer. The devices exhibited average and maximum field-induced mobility of 0.25(±0.10) and 0.37 cm $^{{{2}}}\text{V}^{{-{1}}}\,\,\text{s}^{{-{1}}}$ for PVP/HfO2 devices, and 0.35(±0.18) and 0.69 cm $^{{{2}}}\text{V}^{{-{1}}}\,\,\text{s}^{{-{1}}}$ for PVA/HfO2 devices, respectively, with low threshold voltage and ${I}_{ \mathrm{\scriptscriptstyle ON}}$ to ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio approaching $10^{{{4}}}$ for both types of devices. Overlapping transfer multiple scans with very less performance variation under ambient conditions were observed. The devices were found to be fairly stable even when electrical stress was applied after a period of 5 months. Devices exhibited small degradation in ${I} _{{\text {DS}}}$ and small $\Delta {V} _{{\text {TH}}}$ with high degree of reliability and small performance spreads under combined effects of ambient exposure over a period of 5 months and successive electrical stress. In addition, inverter based on these OFETs with external load was also demonstrated.

Operationally Stable Organic FETs With Bilayer Dielectrics on Low-Cost Flexible Polyimide Substrate

Photo-response of solution processed flexible TIPS-pentacene organic field-effect transistors is evaluated under illumination with visible light of red, green, and blue colors having minimum wavelengths of 620, 520, and 460 nm. For −10 V operation, pristine photo-OFETs exhibited average field-effect mobility of 0.11 cm $^{2}\text{V}^{-1}\text{s}^{-1}$ , near zero threshold voltage, and current ON–OFF ratio of ~105. These photo-OFETs exhibited prevalent photovoltaic characteristics with shift in the threshold voltage upon illumination, which was found to increase with rising intensity, illumination time, and gate bias during illumination. For low-voltage operation at −5 V, maximum current modulation of $4\times 10^{4}$ and 102, and photo-responsivity of 17 mA/W and 35 mA/W, respectively, were achieved for blue (intensity of 1.7 mW/cm2) and green (intensity of 0.4 mW/cm2) light illuminations. However, these photo-OFETs did not show significant response to red light. A fast dynamic response to periodic pulses of illumination was also observed. For a gate bias of +10 V and illumination time of 500 s, maximum current modulation of 105 was achieved for blue light illumination.

Photo-Response of Low Voltage Flexible TIPS-Pentacene Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) have opened up new possibilities as key elements for skinlike intelligent systems, due to the capability of possessing multiple functionalities. Here, multifunctional OFET devices based on gelatin, a natural biopolymer gate dielectric, and TIPS-pentacene as an organic semiconductor are extensively explored. Gelatin is combined with a thin high-k HfO2 dielectric layer deposited by atomic layer deposition (ALD) to achieve a low leakage current and low-voltage operation. The natural biopolymer offers a better semiconductor:dielectric interface, leading to better charge conduction in the devices, along with an enhancement of sensing capabilities giving additional functionality. These fabricated flexible OFET devices exhibit excellent electrical characteristics with a high field-effect mobility reaching over 2 cm2/(V s) (extracted with Ci at 1 kHz), a low subthreshold swing (SS) of ∼200 mV/dec, and a high current on–off (Ion/Ioff) ratio at a low operating voltage of −5 V with excellent electrical and mechanical stability. Moreover, circuit and multiparameter sensing capabilities for visible and UV light, as well as for humidity and breath rate, have been successfully demonstrated for these devices. Our results indicate that these multifunctional OFET devices can open up a plethora of opportunities for practical applications such as real-time health and environmental monitoring. 

Multifunctional Flexible Organic Transistors with a High-k/Natural Protein Bilayer Gate Dielectric for Circuit and Sensing Applications

We report an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer, exhibiting threshold switching with ultralow ON-current of 500 nA. While the higher concentration of MoS2 imparted the higher leakage current in the devices, the lower concentration devices exhibited decent switching with set and reset powers as low as 270 and 0.1 nW, respectively. The ultralow switching current indicates the formation of multiple weak nanosized conductive filaments created due to electromigration of Ag atoms under external bias. Moreover, heating temperature-dependent study of switching behavior confirms the metallic nature of the filament as the low resistance state (LRS) current falls significantly with rising temperature. Furthermore, these devices exhibited remarkable mechanical strength on flexible substrate with demonstration of nondestructive switching characteristics at a bending radius as low as 2.5 mm and after 100 consecutive compressive and tensile strain cycles at ±5-mm radius. The ultralow switching current with high flexibility indicates the capability of devices for advancement toward future low-power flexible memories and computing systems.

Vivek Raghuwanshi

Papers

Operationally Stable Organic FETs With Bilayer Dielectrics on Low-Cost Flexible Polyimide Substrate

Photo-Response of Low Voltage Flexible TIPS-Pentacene Organic Field-Effect Transistors

Multifunctional Flexible Organic Transistors with a High-k/Natural Protein Bilayer Gate Dielectric for Circuit and Sensing Applications

Ultralow Current Switching in Flexible Hybrid PVP:MoS 2 /HfO x Bilayer Devices

Effect of UV irradiation on solution processed low voltage flexible organic field-effect transistors